Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes

P.A. Shields, S. Lis, T. Lee, D.W.E. Allsopp, M.D.B. Charlton, M.E. Zoorob, W.N. Wang

Research output: Contribution to conferenceOther

Abstract

Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.

Conference

ConferenceConference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference
Abbreviated title CLEO/QELS 2009.
CountryUSA United States
CityBaltimore, M.D.
Period2/06/093/06/09

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sapphire
light emitting diodes
photonics
scattering
crystals

Cite this

Shields, P. A., Lis, S., Lee, T., Allsopp, D. W. E., Charlton, M. D. B., Zoorob, M. E., & Wang, W. N. (2009). Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes. 1-2. Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, Baltimore, M.D., USA United States.

Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes. / Shields, P.A.; Lis, S.; Lee, T.; Allsopp, D.W.E.; Charlton, M.D.B.; Zoorob, M.E.; Wang, W.N.

2009. 1-2 Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, Baltimore, M.D., USA United States.

Research output: Contribution to conferenceOther

Shields, PA, Lis, S, Lee, T, Allsopp, DWE, Charlton, MDB, Zoorob, ME & Wang, WN 2009, 'Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes' Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, Baltimore, M.D., USA United States, 2/06/09 - 3/06/09, pp. 1-2.
Shields PA, Lis S, Lee T, Allsopp DWE, Charlton MDB, Zoorob ME et al. Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes. 2009. Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, Baltimore, M.D., USA United States.
Shields, P.A. ; Lis, S. ; Lee, T. ; Allsopp, D.W.E. ; Charlton, M.D.B. ; Zoorob, M.E. ; Wang, W.N. / Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes. Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, Baltimore, M.D., USA United States.2 p.
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title = "Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes",
abstract = "Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.",
author = "P.A. Shields and S. Lis and T. Lee and D.W.E. Allsopp and M.D.B. Charlton and M.E. Zoorob and W.N. Wang",
year = "2009",
month = "6",
day = "2",
language = "English",
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note = "Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, CLEO/QELS 2009. ; Conference date: 02-06-2009 Through 03-06-2009",

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T1 - Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes

AU - Shields, P.A.

AU - Lis, S.

AU - Lee, T.

AU - Allsopp, D.W.E.

AU - Charlton, M.D.B.

AU - Zoorob, M.E.

AU - Wang, W.N.

PY - 2009/6/2

Y1 - 2009/6/2

N2 - Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.

AB - Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.

M3 - Other

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EP - 2

ER -