InAs passivated gasb thermo-photovoltaic cells on a GaAs substrate grown by MOVPE

C.W. Bumby, Q. Fan, P.A. Shields, R.J. Nicholas, S.K. Haywood, L. May

Research output: Contribution to journalArticle

Abstract

The high cost of Gallium Antimonide (GaSb) substrates offers a major obstacle to the commercial uptake of thermophotovoltaic technology. We present results on devices that could provide a route to the realisation of high efficiency and lower cost GaSb cells. Epitaxial GaSb has been grown by MOVPE (Metal-Organic Vapour Phase Epitaxy) on Gallium Arsenide (GaAs) and GaSb substrates and prototype thermo-photovoltaic devices have subsequently been fabricated. A number of growth series have been studied and leakage effects due to the lattice mismatch of 7.8% between GaAs and GaSb have been overcome. A low resistance Indium Arsenide (InAs) contact layer has been grown on the top surface of the cells and this is shown to increase the short circuit current of the cell. It is concluded that this is a passivation effect due to band bending caused by the Type III broken-gap heterojunction at the n-InAs/p-GaSb interface.
Original languageEnglish
Pages (from-to)73-78
Number of pages6
JournalInternational Journal of Ambient Energy
Volume25
Issue number2
Publication statusPublished - 2004

Fingerprint

Indium arsenide
Vapor phase epitaxy
Gallium arsenide
Photovoltaic cells
Lattice mismatch
Gallium
Substrates
Metals
Passivation
Short circuit currents
Heterojunctions
Costs

Cite this

Bumby, C. W., Fan, Q., Shields, P. A., Nicholas, R. J., Haywood, S. K., & May, L. (2004). InAs passivated gasb thermo-photovoltaic cells on a GaAs substrate grown by MOVPE. International Journal of Ambient Energy, 25(2), 73-78.

InAs passivated gasb thermo-photovoltaic cells on a GaAs substrate grown by MOVPE. / Bumby, C.W.; Fan, Q.; Shields, P.A.; Nicholas, R.J.; Haywood, S.K.; May, L.

In: International Journal of Ambient Energy, Vol. 25, No. 2, 2004, p. 73-78.

Research output: Contribution to journalArticle

Bumby, CW, Fan, Q, Shields, PA, Nicholas, RJ, Haywood, SK & May, L 2004, 'InAs passivated gasb thermo-photovoltaic cells on a GaAs substrate grown by MOVPE', International Journal of Ambient Energy, vol. 25, no. 2, pp. 73-78.
Bumby, C.W. ; Fan, Q. ; Shields, P.A. ; Nicholas, R.J. ; Haywood, S.K. ; May, L. / InAs passivated gasb thermo-photovoltaic cells on a GaAs substrate grown by MOVPE. In: International Journal of Ambient Energy. 2004 ; Vol. 25, No. 2. pp. 73-78.
@article{d4a2249e53bf427d93941cb436241c5b,
title = "InAs passivated gasb thermo-photovoltaic cells on a GaAs substrate grown by MOVPE",
abstract = "The high cost of Gallium Antimonide (GaSb) substrates offers a major obstacle to the commercial uptake of thermophotovoltaic technology. We present results on devices that could provide a route to the realisation of high efficiency and lower cost GaSb cells. Epitaxial GaSb has been grown by MOVPE (Metal-Organic Vapour Phase Epitaxy) on Gallium Arsenide (GaAs) and GaSb substrates and prototype thermo-photovoltaic devices have subsequently been fabricated. A number of growth series have been studied and leakage effects due to the lattice mismatch of 7.8{\%} between GaAs and GaSb have been overcome. A low resistance Indium Arsenide (InAs) contact layer has been grown on the top surface of the cells and this is shown to increase the short circuit current of the cell. It is concluded that this is a passivation effect due to band bending caused by the Type III broken-gap heterojunction at the n-InAs/p-GaSb interface.",
author = "C.W. Bumby and Q. Fan and P.A. Shields and R.J. Nicholas and S.K. Haywood and L. May",
year = "2004",
language = "English",
volume = "25",
pages = "73--78",
journal = "International Journal of Ambient Energy",
issn = "0143-0750",
publisher = "Ambient Press Ltd",
number = "2",

}

TY - JOUR

T1 - InAs passivated gasb thermo-photovoltaic cells on a GaAs substrate grown by MOVPE

AU - Bumby, C.W.

AU - Fan, Q.

AU - Shields, P.A.

AU - Nicholas, R.J.

AU - Haywood, S.K.

AU - May, L.

PY - 2004

Y1 - 2004

N2 - The high cost of Gallium Antimonide (GaSb) substrates offers a major obstacle to the commercial uptake of thermophotovoltaic technology. We present results on devices that could provide a route to the realisation of high efficiency and lower cost GaSb cells. Epitaxial GaSb has been grown by MOVPE (Metal-Organic Vapour Phase Epitaxy) on Gallium Arsenide (GaAs) and GaSb substrates and prototype thermo-photovoltaic devices have subsequently been fabricated. A number of growth series have been studied and leakage effects due to the lattice mismatch of 7.8% between GaAs and GaSb have been overcome. A low resistance Indium Arsenide (InAs) contact layer has been grown on the top surface of the cells and this is shown to increase the short circuit current of the cell. It is concluded that this is a passivation effect due to band bending caused by the Type III broken-gap heterojunction at the n-InAs/p-GaSb interface.

AB - The high cost of Gallium Antimonide (GaSb) substrates offers a major obstacle to the commercial uptake of thermophotovoltaic technology. We present results on devices that could provide a route to the realisation of high efficiency and lower cost GaSb cells. Epitaxial GaSb has been grown by MOVPE (Metal-Organic Vapour Phase Epitaxy) on Gallium Arsenide (GaAs) and GaSb substrates and prototype thermo-photovoltaic devices have subsequently been fabricated. A number of growth series have been studied and leakage effects due to the lattice mismatch of 7.8% between GaAs and GaSb have been overcome. A low resistance Indium Arsenide (InAs) contact layer has been grown on the top surface of the cells and this is shown to increase the short circuit current of the cell. It is concluded that this is a passivation effect due to band bending caused by the Type III broken-gap heterojunction at the n-InAs/p-GaSb interface.

M3 - Article

VL - 25

SP - 73

EP - 78

JO - International Journal of Ambient Energy

JF - International Journal of Ambient Energy

SN - 0143-0750

IS - 2

ER -