Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K

Yukinori Ono, Jean-Francois Morizur, Katsuhiko Nishiguchin, Kei Takashina, Hiroshi Yamaguchi, Kazuma Hiratsuka, Seiji Horiguchi, Hiroshi Inokawa, Yasuo Takahashi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Cite this