Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K

Yukinori Ono, Jean-Francois Morizur, Katsuhiko Nishiguchin, Kei Takashina, Hiroshi Yamaguchi, Kazuma Hiratsuka, Seiji Horiguchi, Hiroshi Inokawa, Yasuo Takahashi

Research output: Contribution to journalArticle

13 Citations (Scopus)
Original languageEnglish
Article number235317
JournalPhysical Review B : Condensed Matter and Materials Physics
Volume74
DOIs
Publication statusPublished - 14 Dec 2006

Cite this

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K. / Ono, Yukinori; Morizur, Jean-Francois; Nishiguchin, Katsuhiko; Takashina, Kei; Yamaguchi, Hiroshi; Hiratsuka, Kazuma; Horiguchi, Seiji; Inokawa, Hiroshi; Takahashi, Yasuo.

In: Physical Review B : Condensed Matter and Materials Physics, Vol. 74, 235317, 14.12.2006.

Research output: Contribution to journalArticle

Ono, Yukinori ; Morizur, Jean-Francois ; Nishiguchin, Katsuhiko ; Takashina, Kei ; Yamaguchi, Hiroshi ; Hiratsuka, Kazuma ; Horiguchi, Seiji ; Inokawa, Hiroshi ; Takahashi, Yasuo. / Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K. In: Physical Review B : Condensed Matter and Materials Physics. 2006 ; Vol. 74.
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AU - Takashina, Kei

AU - Yamaguchi, Hiroshi

AU - Hiratsuka, Kazuma

AU - Horiguchi, Seiji

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AU - Takahashi, Yasuo

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