Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K

Yukinori Ono; Jean-Francois Morizur; Katsuhiko Nishiguchin; Kei Takashina; Hiroshi Yamaguchi; Kazuma Hiratsuka; Seiji Horiguchi; Hiroshi Inokawa; Yasuo Takahashi

doi:10.1103/PhysRevB.74.235317

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K

Yukinori Ono, Jean-Francois Morizur, Katsuhiko Nishiguchin, Kei Takashina, Hiroshi Yamaguchi, Kazuma Hiratsuka, Seiji Horiguchi, Hiroshi Inokawa, Yasuo Takahashi

Department of Physics

Research output: Contribution to journal › Article › peer-review

14 Citations (SciVal)

Original language	English
Article number	235317
Journal	Physical Review B : Condensed Matter and Materials Physics
Volume	74
DOIs	https://doi.org/10.1103/PhysRevB.74.235317
Publication status	Published - 14 Dec 2006

Access to Document

10.1103/PhysRevB.74.235317

http://dx.doi.org/10.1103/PhysRevB.74.235317

Cite this

Ono, Y., Morizur, J.-F., Nishiguchin, K., Takashina, K., Yamaguchi, H., Hiratsuka, K., Horiguchi, S., Inokawa, H., & Takahashi, Y. (2006). Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K. Physical Review B : Condensed Matter and Materials Physics, 74, Article 235317. https://doi.org/10.1103/PhysRevB.74.235317

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K. / Ono, Yukinori; Morizur, Jean-Francois; Nishiguchin, Katsuhiko et al.
In: Physical Review B : Condensed Matter and Materials Physics, Vol. 74, 235317, 14.12.2006.

Research output: Contribution to journal › Article › peer-review

Ono, Y, Morizur, J-F, Nishiguchin, K, Takashina, K, Yamaguchi, H, Hiratsuka, K, Horiguchi, S, Inokawa, H & Takahashi, Y 2006, 'Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K', Physical Review B : Condensed Matter and Materials Physics, vol. 74, 235317. https://doi.org/10.1103/PhysRevB.74.235317

@article{a06e4e26289d47469496a12597aa66e1,

title = "Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K",

author = "Yukinori Ono and Jean-Francois Morizur and Katsuhiko Nishiguchin and Kei Takashina and Hiroshi Yamaguchi and Kazuma Hiratsuka and Seiji Horiguchi and Hiroshi Inokawa and Yasuo Takahashi",

year = "2006",

month = dec,

day = "14",

doi = "10.1103/PhysRevB.74.235317",

language = "English",

volume = "74",

journal = "Physical Review B : Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K

AU - Ono, Yukinori

AU - Morizur, Jean-Francois

AU - Nishiguchin, Katsuhiko

AU - Takashina, Kei

AU - Yamaguchi, Hiroshi

AU - Hiratsuka, Kazuma

AU - Horiguchi, Seiji

AU - Inokawa, Hiroshi

AU - Takahashi, Yasuo

PY - 2006/12/14

Y1 - 2006/12/14

UR - http://dx.doi.org/10.1103/PhysRevB.74.235317

U2 - 10.1103/PhysRevB.74.235317

DO - 10.1103/PhysRevB.74.235317

M3 - Article

SN - 1098-0121

VL - 74

JO - Physical Review B : Condensed Matter and Materials Physics

JF - Physical Review B : Condensed Matter and Materials Physics

M1 - 235317

ER -

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K

Access to Document

Other files and links

Cite this