Improvement of efficiency droop in resonanace tunneling LEDS

Chaowang Liu, Wang N Wang, Philip A Shields, Somyod Denchitcharoen, Federica Causa, Duncan E W Allsopp

Research output: Chapter in Book/Report/Conference proceedingChapter

  • 1 Citations

Abstract

A resonance tunnelling LED structure having a high efficiency, low droop and negligible wavelength shift with current is reported in this study. The LED structure contains a thick InGaN bottom spacer between an n-GaN contact layer and a multiple quantum well (MQW) active region, and a thin InGaN top spacer between the MQW and an AlGaN electron blocking layer (EBL). The observed high efficiency and negligible wavelength shift with applied current are attributed to the thick InGaN bottom spacer that nucleates V-pits and acts as a strain control layer for the MQW. The thick InGaN layer also provides an electron reservoir for efficient electron tunnelling injection into the MQW and reduces the electropotential difference between the n-emitter and the p-emitter, to suppress current leakage at high driving current and reduce droop. The top InGaN spacer was designed to act as a magnesium back-diffusion barrier and strain relief layer from EBL so as to obtain high efficiency.
LanguageEnglish
Title of host publication8th International Conference On Solid State Lighting
EditorsI T Ferguson, T Taguchi, I E Ashdown, S J Park
PublisherSPIE
Pages70580D
Volume7058
ISBN (Print)978-0-8194-7278-6
DOIs
StatusPublished - 2 Sep 2008
Event8th International Conference on Solid State Lighting - San Diego, USA United States
Duration: 11 Aug 200813 Aug 2008

Publication series

NameProceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE)
PublisherSpie-Int Soc Optical Engineering

Conference

Conference8th International Conference on Solid State Lighting
CountryUSA United States
CitySan Diego
Period11/08/0813/08/08

Fingerprint

spacers
quantum wells
emitters
light emitting diodes
electrons
shift
electron tunneling
wavelengths
high current
magnesium
leakage
injection

Keywords

  • resonance tunnelling
  • Light emitting diode
  • high efficiency
  • InGaN spacer
  • low droop

Cite this

Liu, C., Wang, W. N., Shields, P. A., Denchitcharoen, S., Causa, F., & Allsopp, D. E. W. (2008). Improvement of efficiency droop in resonanace tunneling LEDS. In I. T. Ferguson, T. Taguchi, I. E. Ashdown, & S. J. Park (Eds.), 8th International Conference On Solid State Lighting (Vol. 7058, pp. 70580D). (Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE)). SPIE. DOI: 10.1117/12.801322

Improvement of efficiency droop in resonanace tunneling LEDS. / Liu, Chaowang; Wang, Wang N; Shields, Philip A; Denchitcharoen, Somyod; Causa, Federica; Allsopp, Duncan E W.

8th International Conference On Solid State Lighting. ed. / I T Ferguson; T Taguchi; I E Ashdown; S J Park. Vol. 7058 SPIE, 2008. p. 70580D (Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE)).

Research output: Chapter in Book/Report/Conference proceedingChapter

Liu, C, Wang, WN, Shields, PA, Denchitcharoen, S, Causa, F & Allsopp, DEW 2008, Improvement of efficiency droop in resonanace tunneling LEDS. in IT Ferguson, T Taguchi, IE Ashdown & SJ Park (eds), 8th International Conference On Solid State Lighting. vol. 7058, Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), SPIE, pp. 70580D, 8th International Conference on Solid State Lighting, San Diego, USA United States, 11/08/08. DOI: 10.1117/12.801322
Liu C, Wang WN, Shields PA, Denchitcharoen S, Causa F, Allsopp DEW. Improvement of efficiency droop in resonanace tunneling LEDS. In Ferguson IT, Taguchi T, Ashdown IE, Park SJ, editors, 8th International Conference On Solid State Lighting. Vol. 7058. SPIE. 2008. p. 70580D. (Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE)). Available from, DOI: 10.1117/12.801322
Liu, Chaowang ; Wang, Wang N ; Shields, Philip A ; Denchitcharoen, Somyod ; Causa, Federica ; Allsopp, Duncan E W. / Improvement of efficiency droop in resonanace tunneling LEDS. 8th International Conference On Solid State Lighting. editor / I T Ferguson ; T Taguchi ; I E Ashdown ; S J Park. Vol. 7058 SPIE, 2008. pp. 70580D (Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE)).
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AU - Causa,Federica

AU - Allsopp,Duncan E W

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AB - A resonance tunnelling LED structure having a high efficiency, low droop and negligible wavelength shift with current is reported in this study. The LED structure contains a thick InGaN bottom spacer between an n-GaN contact layer and a multiple quantum well (MQW) active region, and a thin InGaN top spacer between the MQW and an AlGaN electron blocking layer (EBL). The observed high efficiency and negligible wavelength shift with applied current are attributed to the thick InGaN bottom spacer that nucleates V-pits and acts as a strain control layer for the MQW. The thick InGaN layer also provides an electron reservoir for efficient electron tunnelling injection into the MQW and reduces the electropotential difference between the n-emitter and the p-emitter, to suppress current leakage at high driving current and reduce droop. The top InGaN spacer was designed to act as a magnesium back-diffusion barrier and strain relief layer from EBL so as to obtain high efficiency.

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