Abstract
The operation of a monolithic 5-quantum well, 4-section mode locked semiconductor laser with an integrated distributed Bragg reflector (DBR), which generates 10 ps optical pulses at repetition rate of 10 GHz at a wavelength of 1.55 μm, is investigated. The device is simulated using complete travelling wave model which includes spontaneous and shot noise sources and uses gain parameters independently verified form band calculation models. The jitter is calculated at different delay values. The different contributions to jitter in the laser within the model indicates that spontaneous emission is the dominant cause. The final jitter value and the time constant are investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 211-212 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 2 |
| Publication status | Published - 1 Dec 1997 |
| Event | Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA Duration: 10 Nov 1997 → 13 Nov 1997 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering
Cite this
Rashed, A. M., Wonfor, A., Zhu, B., Penty, R. V., & White, I. H. (1997). Importance of spontaneous emission noise in dynamic jitter in monolithic mode-locked diode lasers. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 211-212.