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We report on the selective area growth (SAG) of GaAs nanowires (NWs) by the catalyst-free vapor-solid mechanism. Well-ordered GaAs NWs were grown on GaAs(111)B substrates patterned with a dielectric mask using hydride vapor phase epitaxy (HVPE). GaAs NWs were grown along the ⟨111⟩B direction with perfect hexagonal shape when the hole’s opening diameter in SiNx or SiOx mask was varied from 80 to 340 nm. The impact of growth conditions and the hole size on the NW lengths and growth rates was investigated. A saturation of the NW lengths was observed at high partial pressures of As4, explained by the presence of As trimers on the (111)B surface at the NW top surface. By decreasing As4 partial pressure and decreasing the hole size, high aspect ratio NWs were obtained. The longest and thinnest NWs grew faster than a two-dimensional layer under the same conditions, which strongly suggests that surface diffusion of Ga adatoms from the NW sidewalls to their top contributes to the resulting axial growth rate. These findings were supported by a dedicated model. The study highlights the capability of the HVPE process to grow high aspect ratio GaAs NW arrays with high selectivity.

Original languageEnglish
Pages (from-to)4401-4409
Number of pages9
JournalCrystal Growth and Design
Issue number6
Early online date22 May 2023
Publication statusPublished - 7 Jun 2023

Bibliographical note

Funding Information:
This work was supported by Région Auvergne Rhône-Alpes; Pack ambition international NanoSpring DRV_PIP_2021-252_IP_NANOSPRING ( https://www.auvergnerhonealpes.fr/77-logo.htm ). This work was supported by the International Research Center “Innovation Transportation and Production Systems” of the I-SITE CAP 20-25. It was also funded by the program “Investissements d’avenir” of the French ANR agency, the French government IDEX-SITE initiative 16-μIDEX-0001 (CAP 20-25), the European Commission (Auvergne FEDER Funds), and the Region Auvergne in the framework of the LabEx IMobS3 (ANR-10-LABX-16-01). The authors thank 2MAtech, Aubiere, France, for scanning electron microscopy measurements. This work also received funding from the H2020 ERC POC project ENUF, grant number 790448. V.G.D. gratefully acknowledges financial support of St. Petersburg State University under the research grant no. 75746688. R.R.L. acknowledges the financial support of the Natural Sciences and Engineering Research Council of Canada from grants RGPIN-2018-04015 and RGPAS-2018-522624.

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics


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