Impact of valley polarization on the resistivity in two dimensions

Kei Takashina, Y Niida, V T Renard, A Fujiwara, T Fujisawa, K Muraki, Y Hirayama

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Abstract

We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.
Original languageEnglish
Article number196403
Number of pages4
JournalPhysical Review Letters
Volume106
Issue number19
Early online date10 May 2011
DOIs
Publication statusPublished - 13 May 2011

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