Impact of valley polarization on the resistivity in two dimensions

Kei Takashina; Y Niida; V T Renard; A Fujiwara; T Fujisawa; K Muraki; Y Hirayama

doi:10.1103/PhysRevLett.106.196403

Impact of valley polarization on the resistivity in two dimensions

Kei Takashina, Y Niida, V T Renard, A Fujiwara, T Fujisawa, K Muraki, Y Hirayama

Department of Physics

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Abstract

We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.

Original language	English
Article number	196403
Number of pages	4
Journal	Physical Review Letters
Volume	106
Issue number	19
Early online date	10 May 2011
DOIs	https://doi.org/10.1103/PhysRevLett.106.196403
Publication status	Published - 13 May 2011

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10.1103/PhysRevLett.106.196403

Takashina_PRL_2011_106_19_196403.pdf
Takashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T., Muraki, K. and Hirayama, Y., 2011. Impact of Valley Polarization on the Resistivity in Two Dimensions. Physical Review Letters, 106 (19), 196403. Copyright (2011) by the American Physical Society.
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Cite this

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abstract = "We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.",

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AU - Takashina, Kei

AU - Niida, Y

AU - Renard, V T

AU - Fujiwara, A

AU - Fujisawa, T

AU - Muraki, K

AU - Hirayama, Y

PY - 2011/5/13

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N2 - We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.

AB - We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.

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Impact of valley polarization on the resistivity in two dimensions

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