Impact of valley polarization on the resistivity in two dimensions

Kei Takashina, Y Niida, V T Renard, A Fujiwara, T Fujisawa, K Muraki, Y Hirayama

Research output: Contribution to journalArticle

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Abstract

We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.
Original languageEnglish
Article number196403
Number of pages4
JournalPhysical Review Letters
Volume106
Issue number19
Early online date10 May 2011
DOIs
Publication statusPublished - 13 May 2011

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valleys
electrical resistivity
polarization
temperature dependence
electrons
insulators
quantum wells
silicon

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Takashina, K., Niida, Y., Renard, V. T., Fujiwara, A., Fujisawa, T., Muraki, K., & Hirayama, Y. (2011). Impact of valley polarization on the resistivity in two dimensions. Physical Review Letters, 106(19), [196403]. https://doi.org/10.1103/PhysRevLett.106.196403

Impact of valley polarization on the resistivity in two dimensions. / Takashina, Kei; Niida, Y; Renard, V T; Fujiwara, A; Fujisawa, T; Muraki, K; Hirayama, Y.

In: Physical Review Letters, Vol. 106, No. 19, 196403, 13.05.2011.

Research output: Contribution to journalArticle

Takashina, K, Niida, Y, Renard, VT, Fujiwara, A, Fujisawa, T, Muraki, K & Hirayama, Y 2011, 'Impact of valley polarization on the resistivity in two dimensions', Physical Review Letters, vol. 106, no. 19, 196403. https://doi.org/10.1103/PhysRevLett.106.196403
Takashina, Kei ; Niida, Y ; Renard, V T ; Fujiwara, A ; Fujisawa, T ; Muraki, K ; Hirayama, Y. / Impact of valley polarization on the resistivity in two dimensions. In: Physical Review Letters. 2011 ; Vol. 106, No. 19.
@article{820ebcfe29e94951909ffbead42ba215,
title = "Impact of valley polarization on the resistivity in two dimensions",
abstract = "We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.",
author = "Kei Takashina and Y Niida and Renard, {V T} and A Fujiwara and T Fujisawa and K Muraki and Y Hirayama",
year = "2011",
month = "5",
day = "13",
doi = "10.1103/PhysRevLett.106.196403",
language = "English",
volume = "106",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "19",

}

TY - JOUR

T1 - Impact of valley polarization on the resistivity in two dimensions

AU - Takashina, Kei

AU - Niida, Y

AU - Renard, V T

AU - Fujiwara, A

AU - Fujisawa, T

AU - Muraki, K

AU - Hirayama, Y

PY - 2011/5/13

Y1 - 2011/5/13

N2 - We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.

AB - We examine the temperature dependence of resistivity in a two-dimensional electron system formed in a silicon-on-insulator quantum well. The device allows us to tune the valley splitting continuously in addition to the electron density. Our data provide a global picture of how the resistivity and its temperature dependence change with valley polarization. At the boundary between valley-polarized and partially polarized regions, we demonstrate that there is an insulating contribution from spin-degenerate electrons occupying the upper valley-subband edge.

UR - http://www.scopus.com/inward/record.url?scp=79960641928&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1103/PhysRevLett.106.196403

U2 - 10.1103/PhysRevLett.106.196403

DO - 10.1103/PhysRevLett.106.196403

M3 - Article

VL - 106

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 19

M1 - 196403

ER -