Projects per year
Abstract
The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In this paper, we investigate the formation and morphology of semi-polar (1122) and non-polar (1120) GaN nanorods using inductively coupled plasma (ICP) etching. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. A dominant chemical component is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. These conditions were obtained for a small percentage of chlorine (Cl2) within the Cl2 + argon (Ar) plasma combined with a low pressure. Damage to the crystal was reduced by lowering the direct current (DC) bias through a reduction of the RF power and an increase of the ICP power.
Original language | English |
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Article number | 2562 |
Pages (from-to) | 1-14 |
Number of pages | 14 |
Journal | Nanomaterials |
Volume | 10 |
Issue number | 12 |
DOIs | |
Publication status | Published - 20 Dec 2020 |
Bibliographical note
Funding Information:Funding: The authors would like to acknowledge financial support of the EPSRC, UK via Grant No. EP/M015181/1, “Manufacturing nano-engineered III-nitrides”.
Publisher Copyright:
© 2020 by the authors. Licensee MDPI, Basel, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
Funding
Funding: The authors would like to acknowledge financial support of the EPSRC, UK via Grant No. EP/M015181/1, “Manufacturing nano-engineered III-nitrides”.
Keywords
- Dry etching
- GaN
- Inductively coupled plasma
- Light emitting devices
- Morphology
- Nanostructures
ASJC Scopus subject areas
- General Chemical Engineering
- General Materials Science
Fingerprint
Dive into the research topics of 'Impact of inductively coupled plasma etching conditions on the formation of semi-polar (11 2‾2) and non-polar (11 2‾0) GaN nanorods'. Together they form a unique fingerprint.Projects
- 2 Finished
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Manufacturing of Nano-Engineered III-N Semiconductors
Shields, P. (PI), Allsopp, D. (CoI) & Wang, W. (CoI)
Engineering and Physical Sciences Research Council
1/05/15 → 30/09/21
Project: Research council
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Manufacturing of Nano-Engineered III-N Semiconductors - Equipment
Shields, P. (PI) & Allsopp, D. (CoI)
Engineering and Physical Sciences Research Council
1/02/15 → 31/01/20
Project: Research council
Datasets
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Dataset for Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (11-22) and Non-Polar (11-20) GaN Nanorods
Coulon, P.-M. (Creator), University of Bath, 20 Dec 2020
DOI: 10.15125/BATH-00950
Dataset