Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy

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ID number: ISI:000228422600041

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@article{6ca6fa0f574a4ea584f9bd7baed9a25c,

title = "Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy",

author = "Shoukri, \{K M\} and Haddara, \{Y M\} and Knights, \{A P\} and Coleman, \{P G\}",

note = "ID number: ISI:000228422600041",

year = "2005",

doi = "10.1063/1.1897826",

language = "English",

volume = "86",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy

AU - Shoukri, K M

AU - Haddara, Y M

AU - Knights, A P

AU - Coleman, P G

N1 - ID number: ISI:000228422600041

PY - 2005

Y1 - 2005

U2 - 10.1063/1.1897826

DO - 10.1063/1.1897826

M3 - Article

SN - 0003-6951

VL - 86

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -