Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy

K M Shoukri, Y M Haddara, A P Knights, P G Coleman

Research output: Contribution to journalArticlepeer-review

8 Citations (SciVal)
Original languageEnglish
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2005

Bibliographical note

ID number: ISI:000228422600041

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