Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy

K M Shoukri, Y M Haddara, A P Knights, P G Coleman

Research output: Contribution to journalArticle

8 Citations (Scopus)
Original languageEnglish
JournalApplied Physics Letters
Volume86
Issue number13
Publication statusPublished - 2005

Cite this

Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy. / Shoukri, K M; Haddara, Y M; Knights, A P; Coleman, P G.

In: Applied Physics Letters, Vol. 86, No. 13, 2005.

Research output: Contribution to journalArticle

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