Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy

K M Shoukri, Y M Haddara, A P Knights, P G Coleman

Research output: Contribution to journal › Article › peer-review

9 Citations (SciVal)

ID number: ISI:000228422600041

Cite this

@article{6ca6fa0f574a4ea584f9bd7baed9a25c,

title = "Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy",

author = "Shoukri, {K M} and Haddara, {Y M} and Knights, {A P} and Coleman, {P G}",

note = "ID number: ISI:000228422600041",

year = "2005",

language = "English",

volume = "86",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}