Impact of dislocations in monolithic III-V lasers on silicon: A theoretical approach

Constanze Hantschmann, Zizhuo Liu, Mingchu C. Tang, Alwyn J. Seeds, Huiyun Liu, Ian H. White, Richard V. Penty

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The growth of reliable III-V quantum well (QW) lasers on silicon remains a challenge as yet unmastered due to the issue of carrier migration into dislocations. We have recently compared the functionality of quantum dots (QDs) and QWs in the presence of high dislocation densities using rate equation travelling-wave simulations, which were based on 10-μm large spatial steps, and thus only allowed the use of effective laser parameters to model the performance degradation resulting from dislocation-induced carrier loss. Here we increase the resolution to the sub-micrometer level to enable the spatially resolved simulation of individual dislocations placed along the longitudinal cavity direction in order to study the physical mechanisms behind the characteristics of monolithic 980 nm In(Ga)As/GaAs QW and 1.3 μm QD lasers on silicon. Our simulations point out the role of diffusion-assisted carrier loss, which enables carrier migration into defect states resulting in highly absorptive regions over several micrometers in QW structures, whereas QD active regions with their efficient carrier capture and hence naturally reduced diffusion length show a higher immunity to defects. An additional interesting finding not accessible in a lower-resolution approach is that areas of locally reduced gain need to be compensated for in dislocation-free regions, which may lead to increased gain compression effects in silicon-based QD lasers with limited modal gain.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XXVIII
EditorsBernd Witzigmann, Marek Osinski, Yasuhiko Arakawa
PublisherSPIE
ISBN (Electronic)9781510633117
DOIs
Publication statusPublished - 2 Mar 2020
EventPhysics and Simulation of Optoelectronic Devices XXVIII 2020 - San Francisco, USA United States
Duration: 3 Feb 20206 Feb 2020

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11274
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferencePhysics and Simulation of Optoelectronic Devices XXVIII 2020
CountryUSA United States
CitySan Francisco
Period3/02/206/02/20

Keywords

  • Photonic integration
  • quantum dot lasers
  • quantum well lasers
  • semiconductor defects
  • semiconductor laser modelling
  • silicon photonics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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