In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry

C Liu, S Stepanov, P A Shields, A Gott, W N Wang, E Steimetz, J T Zettler

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The application of spectroscopic reflectometry to the monitoring of epitaxial lateral overgrowth of GaN in low pressure metalorganic vapor phase epitaxy has been investigated. Real-time vertical and lateral growth rates and hence thickness and wing width of the growing GaN are extracted. A vertical growth enhancement was clearly observed at an early stage, followed by vertical growth suppression until full coalescence was achieved. The lateral to vertical growth ratio was obtained showing clear time dependent characteristics. The observations were explained by considering the mass transport between the growing (0001) facets and the {11 (2) over bar0} sidewall facets. (c) 2006 American Institute of Physics.
Original languageEnglish
JournalApplied Physics Letters
Issue number10
Publication statusPublished - 2006

Bibliographical note

ID number: ISI:000235905800003


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