Abstract
A long-term vision of the power electronics community is to develop highly integrated power electronic converters that are specialized for their particular applications. The motivation for a migration from silicon (Si) to silicon carbide (SiC) power electronics is driven by the need for those power converters to have much greater power density, reliability, and overall system performance without costly devices or designs. The benefit of moving to SiC is that, for power electronics, it is inevitable that there will be a rapid transition from Si to SiC technology.
Original language | English |
---|---|
Pages | 40-44 |
Number of pages | 5 |
Volume | 5 |
No. | 2 |
Specialist publication | IEEE Power Electronics Magazine |
DOIs | |
Publication status | Published - 1 Jun 2018 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering