Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon

R Harding, G Davies, J Tan, P G Coleman, C P Burrows, J Wong-Leung

Research output: Contribution to journalArticlepeer-review

6 Citations (SciVal)
Original languageEnglish
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 2006

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