Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon

R Harding, G Davies, J Tan, P G Coleman, C P Burrows, J Wong-Leung

Research output: Contribution to journal › Article › peer-review

6 Citations (SciVal)

ID number: ISI:000241248000012

Cite this

@article{136df44463744b81b73fe6299ea9a59a,

title = "Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon",

author = "R Harding and G Davies and J Tan and Coleman, {P G} and Burrows, {C P} and J Wong-Leung",

note = "ID number: ISI:000241248000012",

year = "2006",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon

AU - Harding, R

AU - Davies, G

AU - Tan, J

AU - Coleman, P G

AU - Burrows, C P

AU - Wong-Leung, J

N1 - ID number: ISI:000241248000012

PY - 2006

Y1 - 2006

M3 - Article

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -