Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon

R Harding, G Davies, J Tan, P G Coleman, C P Burrows, J Wong-Leung

Research output: Contribution to journalArticle

6 Citations (Scopus)
Original languageEnglish
JournalJournal of Applied Physics
Volume100
Issue number7
Publication statusPublished - 2006

Cite this

Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon. / Harding, R; Davies, G; Tan, J; Coleman, P G; Burrows, C P; Wong-Leung, J.

In: Journal of Applied Physics, Vol. 100, No. 7, 2006.

Research output: Contribution to journalArticle

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AU - Harding, R

AU - Davies, G

AU - Tan, J

AU - Coleman, P G

AU - Burrows, C P

AU - Wong-Leung, J

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JO - Journal of Applied Physics

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