ICP etching of III-nitride based laser structure with Cl-2-Ar plasma assisted by Si coverplate material

Evgeny Zhirnov; Sergei Stepanov; Alan Gott; Wang Nang Wang; Y. G. Shreter; D. V. Tarkhin; N. I. Bochkareva

doi:10.1116/1.1914812

ICP etching of III-nitride based laser structure with Cl-₂-Ar plasma assisted by Si coverplate material

Evgeny Zhirnov, Sergei Stepanov, Alan Gott, Wang Nang Wang, Y. G. Shreter, D. V. Tarkhin, N. I. Bochkareva

Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (SciVal)

Abstract

ICP etching of GaN, Al_0.1Ga_0.9N, and a laser diode (LD) structure with Cl-₂-Ar plasma assisted by Si coverplate material was systematically studied. The influence of the process pressure, rf and ICP power on the etch rate, surface morphology, and selectivity to the SiO₂ mask was investigated. Smooth anisotropic etch profiles and smooth etch surfaces were obtained for a wide range of process parameters. It was found that an ICP plasma source employed in the particular system used does not significantly effect the sheath ion density and cathode dc-bias, due to the remote location of it. However, the ICP source generates a large amount of reactive radicals, which facilitate fast and smooth etching of Al-containing layers.

Original language	English
Pages (from-to)	687-692
Number of pages	6
Journal	Journal of Vacuum Science & Technology A
Volume	23
Issue number	4
DOIs	https://doi.org/10.1116/1.1914812
Publication status	Published - 2005

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ID number: ISI:000230717200022

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title = "ICP etching of III-nitride based laser structure with Cl-2-Ar plasma assisted by Si coverplate material",

abstract = "ICP etching of GaN, Al0.1Ga0.9N, and a laser diode (LD) structure with Cl-2-Ar plasma assisted by Si coverplate material was systematically studied. The influence of the process pressure, rf and ICP power on the etch rate, surface morphology, and selectivity to the SiO2 mask was investigated. Smooth anisotropic etch profiles and smooth etch surfaces were obtained for a wide range of process parameters. It was found that an ICP plasma source employed in the particular system used does not significantly effect the sheath ion density and cathode dc-bias, due to the remote location of it. However, the ICP source generates a large amount of reactive radicals, which facilitate fast and smooth etching of Al-containing layers. ",

author = "Evgeny Zhirnov and Sergei Stepanov and Alan Gott and Wang, {Wang Nang} and Shreter, {Y. G.} and Tarkhin, {D. V.} and Bochkareva, {N. I.}",

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doi = "10.1116/1.1914812",

language = "English",

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pages = "687--692",

journal = "Journal of Vacuum Science & Technology A",

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TY - JOUR

T1 - ICP etching of III-nitride based laser structure with Cl-2-Ar plasma assisted by Si coverplate material

AU - Zhirnov, Evgeny

AU - Stepanov, Sergei

AU - Gott, Alan

AU - Wang, Wang Nang

AU - Shreter, Y. G.

AU - Tarkhin, D. V.

AU - Bochkareva, N. I.

N1 - ID number: ISI:000230717200022

PY - 2005

Y1 - 2005

N2 - ICP etching of GaN, Al0.1Ga0.9N, and a laser diode (LD) structure with Cl-2-Ar plasma assisted by Si coverplate material was systematically studied. The influence of the process pressure, rf and ICP power on the etch rate, surface morphology, and selectivity to the SiO2 mask was investigated. Smooth anisotropic etch profiles and smooth etch surfaces were obtained for a wide range of process parameters. It was found that an ICP plasma source employed in the particular system used does not significantly effect the sheath ion density and cathode dc-bias, due to the remote location of it. However, the ICP source generates a large amount of reactive radicals, which facilitate fast and smooth etching of Al-containing layers.

AB - ICP etching of GaN, Al0.1Ga0.9N, and a laser diode (LD) structure with Cl-2-Ar plasma assisted by Si coverplate material was systematically studied. The influence of the process pressure, rf and ICP power on the etch rate, surface morphology, and selectivity to the SiO2 mask was investigated. Smooth anisotropic etch profiles and smooth etch surfaces were obtained for a wide range of process parameters. It was found that an ICP plasma source employed in the particular system used does not significantly effect the sheath ion density and cathode dc-bias, due to the remote location of it. However, the ICP source generates a large amount of reactive radicals, which facilitate fast and smooth etching of Al-containing layers.

UR - http://dx.doi.org/10.1116/1.1914812

U2 - 10.1116/1.1914812

DO - 10.1116/1.1914812

M3 - Article

SN - 0734-2101

VL - 23

SP - 687

EP - 692

JO - Journal of Vacuum Science & Technology A

JF - Journal of Vacuum Science & Technology A

IS - 4

ER -

ICP etching of III-nitride based laser structure with Cl-₂-Ar plasma assisted by Si coverplate material

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