Hybrid top-down/bottom-up fabrication of regular arrays of AlN nanorods for deep-UV core-shell LEDs

Pierre-Marie Coulon, Gunnar Kusch, Emmanuel Le Boulbar, Pierre Chausse, C. G. Bryce, R. W. Martin, Philip Shields

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Core–shell nanostructures are predicted to highly improve the efficiency of deep-UV light emitting diodes (LEDs), owing to their low defect density, reduced quantum-confined Stark effect, high-quality non-polar growth and improved extraction efficiency. In this paper, we report on the nanofabrication of high-quality AlN nanorod arrays using a hybrid top-down/bottom-up approach for use as a scaffold for UV LED structures. We describe the use of Displacement Talbot Lithography to fabricate a metallic hard etch mask to allow AlN nanorod arrays to be dry etched from a planar AlN template. In particular, we investigate the impact of etching parameters on the nanorod etch rate, tapering profile and mask selectivity in order to achieve vertical-sided nanorod arrays with high aspect ratios. AlN facet recovery is subsequently explored by means of regrowth using Metal Organic Vapor Phase Epitaxy. Low pressure and high V/III ratio promote straight and smooth sidewall faceting, which results in an improvement of the optical quality compared to the initial AlN template. The promising results open new perspectives for the fabrication of high-efficiency deep-UV-emitting core–shell LEDs.
Original languageEnglish
Article number1700445
Number of pages9
JournalPhysica Status Solidi (B)
Volume255
Issue number5
Early online date30 Nov 2017
DOIs
Publication statusPublished - 1 May 2018

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Nanorods
nanorods
Light emitting diodes
light emitting diodes
Fabrication
fabrication
Ultraviolet radiation
Masks
Diodes
masks
templates
Stark effect
Vapor phase epitaxy
nanofabrication
Defect density
tapering
high aspect ratio
Nanotechnology
Scaffolds
vapor phase epitaxy

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Hybrid top-down/bottom-up fabrication of regular arrays of AlN nanorods for deep-UV core-shell LEDs. / Coulon, Pierre-Marie; Kusch, Gunnar ; Le Boulbar, Emmanuel; Chausse, Pierre; Bryce, C. G.; Martin, R. W.; Shields, Philip.

In: Physica Status Solidi (B), Vol. 255, No. 5, 1700445 , 01.05.2018.

Research output: Contribution to journalArticle

@article{d0ea9e01f68644a4a724f5049888e446,
title = "Hybrid top-down/bottom-up fabrication of regular arrays of AlN nanorods for deep-UV core-shell LEDs",
abstract = "Core–shell nanostructures are predicted to highly improve the efficiency of deep-UV light emitting diodes (LEDs), owing to their low defect density, reduced quantum-confined Stark effect, high-quality non-polar growth and improved extraction efficiency. In this paper, we report on the nanofabrication of high-quality AlN nanorod arrays using a hybrid top-down/bottom-up approach for use as a scaffold for UV LED structures. We describe the use of Displacement Talbot Lithography to fabricate a metallic hard etch mask to allow AlN nanorod arrays to be dry etched from a planar AlN template. In particular, we investigate the impact of etching parameters on the nanorod etch rate, tapering profile and mask selectivity in order to achieve vertical-sided nanorod arrays with high aspect ratios. AlN facet recovery is subsequently explored by means of regrowth using Metal Organic Vapor Phase Epitaxy. Low pressure and high V/III ratio promote straight and smooth sidewall faceting, which results in an improvement of the optical quality compared to the initial AlN template. The promising results open new perspectives for the fabrication of high-efficiency deep-UV-emitting core–shell LEDs.",
author = "Pierre-Marie Coulon and Gunnar Kusch and {Le Boulbar}, Emmanuel and Pierre Chausse and Bryce, {C. G.} and Martin, {R. W.} and Philip Shields",
year = "2018",
month = "5",
day = "1",
doi = "10.1002/pssb.201700445",
language = "English",
volume = "255",
journal = "Physica Status Solidi (B)",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "5",

}

TY - JOUR

T1 - Hybrid top-down/bottom-up fabrication of regular arrays of AlN nanorods for deep-UV core-shell LEDs

AU - Coulon, Pierre-Marie

AU - Kusch, Gunnar

AU - Le Boulbar, Emmanuel

AU - Chausse, Pierre

AU - Bryce, C. G.

AU - Martin, R. W.

AU - Shields, Philip

PY - 2018/5/1

Y1 - 2018/5/1

N2 - Core–shell nanostructures are predicted to highly improve the efficiency of deep-UV light emitting diodes (LEDs), owing to their low defect density, reduced quantum-confined Stark effect, high-quality non-polar growth and improved extraction efficiency. In this paper, we report on the nanofabrication of high-quality AlN nanorod arrays using a hybrid top-down/bottom-up approach for use as a scaffold for UV LED structures. We describe the use of Displacement Talbot Lithography to fabricate a metallic hard etch mask to allow AlN nanorod arrays to be dry etched from a planar AlN template. In particular, we investigate the impact of etching parameters on the nanorod etch rate, tapering profile and mask selectivity in order to achieve vertical-sided nanorod arrays with high aspect ratios. AlN facet recovery is subsequently explored by means of regrowth using Metal Organic Vapor Phase Epitaxy. Low pressure and high V/III ratio promote straight and smooth sidewall faceting, which results in an improvement of the optical quality compared to the initial AlN template. The promising results open new perspectives for the fabrication of high-efficiency deep-UV-emitting core–shell LEDs.

AB - Core–shell nanostructures are predicted to highly improve the efficiency of deep-UV light emitting diodes (LEDs), owing to their low defect density, reduced quantum-confined Stark effect, high-quality non-polar growth and improved extraction efficiency. In this paper, we report on the nanofabrication of high-quality AlN nanorod arrays using a hybrid top-down/bottom-up approach for use as a scaffold for UV LED structures. We describe the use of Displacement Talbot Lithography to fabricate a metallic hard etch mask to allow AlN nanorod arrays to be dry etched from a planar AlN template. In particular, we investigate the impact of etching parameters on the nanorod etch rate, tapering profile and mask selectivity in order to achieve vertical-sided nanorod arrays with high aspect ratios. AlN facet recovery is subsequently explored by means of regrowth using Metal Organic Vapor Phase Epitaxy. Low pressure and high V/III ratio promote straight and smooth sidewall faceting, which results in an improvement of the optical quality compared to the initial AlN template. The promising results open new perspectives for the fabrication of high-efficiency deep-UV-emitting core–shell LEDs.

U2 - 10.1002/pssb.201700445

DO - 10.1002/pssb.201700445

M3 - Article

VL - 255

JO - Physica Status Solidi (B)

JF - Physica Status Solidi (B)

SN - 0370-1972

IS - 5

M1 - 1700445

ER -