Abstract
A low-power, high-performance integrated 4 × 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are implemented as the main switching elements and short switchable SOAs are used to either compensate the loss or suppress the crosstalk. A dilated Beneš architecture is implemented to reduce the crosstalk and offer rearrangeably nonblocking connections. The 4 × 4 switch exhibits a low 1.3-dB loss, a crosstalk ratio of -47 dB, and more than 13-dB input power dynamic range (IPDR) for a 0.5-dB power penalty at a 10-Gb/s signal rate. By active control of injection currents into the SOAs, a fixed output power is achieved for a 10-dB range of input power and the IPDR is extended by at least 4 dB. A 12-mA control current tolerance has been demonstrated for a 10-dB IPDR. The performance of a 16 × 16 switch is emulated by cascading two 4 × 4 chips. A record IPDR of 15 dB at a 1-dB penalty is achieved with a 0.6-dB power penalty floor.
| Original language | English |
|---|---|
| Article number | 8063924 |
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | 24 |
| Issue number | 1 |
| Early online date | 10 Oct 2017 |
| DOIs | |
| Publication status | Published - 1 Jan 2018 |
Keywords
- indium compounds
- Integrated optics
- optical switches
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
Hybrid MZI-SOA InGaAs/InP photonic integrated switches. / Ding, Minsheng; Wonfor, Adrian; Cheng, Qixiang; Penty, Richard V.; White, Ian H.
In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 24, No. 1, 8063924, 01.01.2018.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Hybrid MZI-SOA InGaAs/InP photonic integrated switches
AU - Ding, Minsheng
AU - Wonfor, Adrian
AU - Cheng, Qixiang
AU - Penty, Richard V.
AU - White, Ian H.
PY - 2018/1/1
Y1 - 2018/1/1
N2 - A low-power, high-performance integrated 4 × 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are implemented as the main switching elements and short switchable SOAs are used to either compensate the loss or suppress the crosstalk. A dilated Beneš architecture is implemented to reduce the crosstalk and offer rearrangeably nonblocking connections. The 4 × 4 switch exhibits a low 1.3-dB loss, a crosstalk ratio of -47 dB, and more than 13-dB input power dynamic range (IPDR) for a 0.5-dB power penalty at a 10-Gb/s signal rate. By active control of injection currents into the SOAs, a fixed output power is achieved for a 10-dB range of input power and the IPDR is extended by at least 4 dB. A 12-mA control current tolerance has been demonstrated for a 10-dB IPDR. The performance of a 16 × 16 switch is emulated by cascading two 4 × 4 chips. A record IPDR of 15 dB at a 1-dB penalty is achieved with a 0.6-dB power penalty floor.
AB - A low-power, high-performance integrated 4 × 4 hybrid Mach-Zehnder interferometer (MZI) semiconductor optical amplifier (SOA) optical switch is designed, fabricated, and characterized. The 4 mm × 6 mm device is fabricated using an active-passive integration scheme in an InGaAsP/InP foundry. MZIs are implemented as the main switching elements and short switchable SOAs are used to either compensate the loss or suppress the crosstalk. A dilated Beneš architecture is implemented to reduce the crosstalk and offer rearrangeably nonblocking connections. The 4 × 4 switch exhibits a low 1.3-dB loss, a crosstalk ratio of -47 dB, and more than 13-dB input power dynamic range (IPDR) for a 0.5-dB power penalty at a 10-Gb/s signal rate. By active control of injection currents into the SOAs, a fixed output power is achieved for a 10-dB range of input power and the IPDR is extended by at least 4 dB. A 12-mA control current tolerance has been demonstrated for a 10-dB IPDR. The performance of a 16 × 16 switch is emulated by cascading two 4 × 4 chips. A record IPDR of 15 dB at a 1-dB penalty is achieved with a 0.6-dB power penalty floor.
KW - indium compounds
KW - Integrated optics
KW - optical switches
UR - http://www.scopus.com/inward/record.url?scp=85031807673&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2017.2759278
DO - 10.1109/JSTQE.2017.2759278
M3 - Article
VL - 24
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
SN - 1077-260X
IS - 1
M1 - 8063924
ER -