Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode

Vojtech F. Olle; Adrian Wonfor; Luca A M Sulmoni; Peter P. Vasilèv; Jean Michel Lamy; Jean Francois Carlin; Nicolas Grandjean; Richard V. Penty; Ian H. White

doi:10.1109/LPT.2013.2267807

Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode

Vojtech F. Olle, Adrian Wonfor, Luca A M Sulmoni, Peter P. Vasilèv, Jean Michel Lamy, Jean Francois Carlin, Nicolas Grandjean, Richard V. Penty, Ian H. White

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9 Citations (SciVal)

Abstract

We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively.

Original language	English
Article number	6531631
Pages (from-to)	1514-1516
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	15
Early online date	13 Jun 2013
DOIs	https://doi.org/10.1109/LPT.2013.2267807
Publication status	Published - 1 Aug 2013

Keywords

Mode-locked lasers
Semiconductor lasers
Ultrafast lasers
Visible lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

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10.1109/LPT.2013.2267807

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title = "Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode",

abstract = "We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively.",

keywords = "Mode-locked lasers, Semiconductor lasers, Ultrafast lasers, Visible lasers",

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AU - Olle, Vojtech F.

AU - Wonfor, Adrian

AU - Sulmoni, Luca A M

AU - Vasilèv, Peter P.

AU - Lamy, Jean Michel

AU - Carlin, Jean Francois

AU - Grandjean, Nicolas

AU - Penty, Richard V.

AU - White, Ian H.

PY - 2013/8/1

Y1 - 2013/8/1

N2 - We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively.

AB - We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively.

KW - Mode-locked lasers

KW - Semiconductor lasers

KW - Ultrafast lasers

KW - Visible lasers

UR - https://www.scopus.com/pages/publications/84880878365

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ER -

Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode

Abstract

Keywords

ASJC Scopus subject areas

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