Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode

Vojtech F. Olle; Adrian Wonfor; Luca A M Sulmoni; Peter P. Vasilèv; Jean Michel Lamy; Jean Francois Carlin; Nicolas Grandjean; Richard V. Penty; Ian H. White

doi:10.1109/LPT.2013.2267807

Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode

Vojtech F. Olle, Adrian Wonfor, Luca A M Sulmoni, Peter P. Vasilèv, Jean Michel Lamy, Jean Francois Carlin, Nicolas Grandjean, Richard V. Penty, Ian H. White

Vice Chancellor's Office

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9 Citations (SciVal)

Abstract

We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively.

Original language	English
Article number	6531631
Pages (from-to)	1514-1516
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	15
Early online date	13 Jun 2013
DOIs	https://doi.org/10.1109/LPT.2013.2267807
Publication status	Published - 1 Aug 2013

Keywords

Mode-locked lasers
Semiconductor lasers
Ultrafast lasers
Visible lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

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10.1109/LPT.2013.2267807

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@article{62f92c875d354fe3b45dbb5f3f436029,

title = "Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode",

abstract = "We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively.",

keywords = "Mode-locked lasers, Semiconductor lasers, Ultrafast lasers, Visible lasers",

author = "Olle, {Vojtech F.} and Adrian Wonfor and Sulmoni, {Luca A M} and Vasil{\`e}v, {Peter P.} and Lamy, {Jean Michel} and Carlin, {Jean Francois} and Nicolas Grandjean and Penty, {Richard V.} and White, {Ian H.}",

year = "2013",

month = aug,

day = "1",

doi = "10.1109/LPT.2013.2267807",

language = "English",

volume = "25",

pages = "1514--1516",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "IEEE",

number = "15",

}

TY - JOUR

T1 - Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode

AU - Olle, Vojtech F.

AU - Wonfor, Adrian

AU - Sulmoni, Luca A M

AU - Vasilèv, Peter P.

AU - Lamy, Jean Michel

AU - Carlin, Jean Francois

AU - Grandjean, Nicolas

AU - Penty, Richard V.

AU - White, Ian H.

PY - 2013/8/1

Y1 - 2013/8/1

N2 - We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively.

AB - We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively.

KW - Mode-locked lasers

KW - Semiconductor lasers

KW - Ultrafast lasers

KW - Visible lasers

UR - http://www.scopus.com/inward/record.url?scp=84880878365&partnerID=8YFLogxK

U2 - 10.1109/LPT.2013.2267807

DO - 10.1109/LPT.2013.2267807

M3 - Article

AN - SCOPUS:84880878365

SN - 1041-1135

VL - 25

SP - 1514

EP - 1516

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 15

M1 - 6531631

ER -

Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode

Abstract

Keywords

ASJC Scopus subject areas

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