Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode

Vojtech F. Olle, Adrian Wonfor, Luca A M Sulmoni, Peter P. Vasilèv, Jean Michel Lamy, Jean Francois Carlin, Nicolas Grandjean, Richard V. Penty, Ian H. White

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8 Citations (Scopus)


We report the first hybrid mode-locking of a monolithic two-section multiple quantum well InGaN based laser diode. This device, with a length of 1.5 mm, has a 50-μm-long absorber section located at the back facet and generates a continuous stable 28.6 GHz pulse train with an average output power of 9.4 mW at an emission wavelength of 422 nm. Under hybrid mode-locking, the pulse width reduces to 4 ps, the peak power increases to 72 mW, and the microwave linewidth reduces by 13 dB to <500 kHz. We also observe the passive mode-locking with pulse width and peak power of 8 ps and 37 mW, respectively.

Original languageEnglish
Article number6531631
Pages (from-to)1514-1516
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number15
Early online date13 Jun 2013
Publication statusPublished - 1 Aug 2013


  • Mode-locked lasers
  • Semiconductor lasers
  • Ultrafast lasers
  • Visible lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

Olle, V. F., Wonfor, A., Sulmoni, L. A. M., Vasilèv, P. P., Lamy, J. M., Carlin, J. F., Grandjean, N., Penty, R. V., & White, I. H. (2013). Hybrid and passive mode-locking of a monolithic two-section MQW InGaN/GaN laser diode. IEEE Photonics Technology Letters, 25(15), 1514-1516. [6531631]. https://doi.org/10.1109/LPT.2013.2267807