Highly sensitive recognition element based on birefringent porous silicon layers

E Gross, D Kovalev, N Kunzner, V Y Timoshenko, J Diener, F Koch

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38 Citations (Scopus)

Abstract

Anisotropically nanostructured silicon layers exhibit a strong in-plane birefringence. Their optical anisotropy parameters are found to be extremely sensitive to the presence of dielectric substances inside of the pores. Polarization-resolved transmittance measurements provide an extremely sensitive tool to analyze the adsorption of various atoms and molecules in negligible quantities. A variation of the transmitted linearly polarized light intensity up to two orders of magnitude combined with a fast optical response in the range of seconds make these layers a good candidate for sensor applications. (C) 2001 American Institute of Physics.
Original languageEnglish
Pages (from-to)3529-3532
Number of pages4
JournalJournal of Applied Physics
Volume90
Issue number7
Publication statusPublished - 2001

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    Gross, E., Kovalev, D., Kunzner, N., Timoshenko, V. Y., Diener, J., & Koch, F. (2001). Highly sensitive recognition element based on birefringent porous silicon layers. Journal of Applied Physics, 90(7), 3529-3532.