Highly sensitive recognition element based on birefringent porous silicon layers

E Gross, D Kovalev, N Kunzner, V Y Timoshenko, J Diener, F Koch

Research output: Contribution to journalArticlepeer-review

39 Citations (SciVal)


Anisotropically nanostructured silicon layers exhibit a strong in-plane birefringence. Their optical anisotropy parameters are found to be extremely sensitive to the presence of dielectric substances inside of the pores. Polarization-resolved transmittance measurements provide an extremely sensitive tool to analyze the adsorption of various atoms and molecules in negligible quantities. A variation of the transmitted linearly polarized light intensity up to two orders of magnitude combined with a fast optical response in the range of seconds make these layers a good candidate for sensor applications. (C) 2001 American Institute of Physics.
Original languageEnglish
Pages (from-to)3529-3532
Number of pages4
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 2001

Bibliographical note

ID number: ISI:000171135900064


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