High-Throughput Atomic Layer Deposition of p-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide)

Alfredo Mameli, James D. Parish, Tamer Dogan, Gerwin Gelinck, Michael W. Snook, Andrew J. Straiton, Andrew L. Johnson, Auke J. Kronemeijer

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Abstract

Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA) 2, and H 2O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of SnO, deposition rates of up to 19.5 times higher are obtained using Sn(TAA) 2 as a precursor in combination with atmospheric pressure sALD. Growths per cycle of 0.55 and 0.09 Å are measured at deposition temperatures of 100 and 210 °C, respectively. Common-gate thin film transistors (TFTs), fabricated using sALD with Sn(TAA) 2 result in linear mobilities of up to 0.4 cm 2 V –1 s –1 and on/off-current ratios, I On/I Off > 10 2. The combination of enhanced precursor chemistry and improved deposition hardware enables unprecedently high deposition rate ALD of p-type SnO, representing a significant step toward high-throughput p-type TFT fabrication on large area and flexible substrates.

Original languageEnglish
Article number2101278
Number of pages8
JournalAdvanced Materials Interfaces
Volume9
Issue number9
Early online date3 Feb 2022
DOIs
Publication statusPublished - 22 Mar 2022

Bibliographical note

Funding Information:
The authors are thankful to Ilias Katsouras for fruitful discussions. Leslye Ugalde and Thijs Bel are greatly acknowledged for their technical support. The authors would also like to thank Andrew Brookes, the Chemical Characterization and Analysis Facility, University of Bath, and Dr Andrew Britton of the Henry Royce Institute, University of Leeds, for their assistance and input on characterization. This work was partially financed by the King Abdullah University of Science and Technology (KAUST) Office for Sponsored Research (OSR) under Award OSR-CRG2018-3783. The authors also gratefully acknowledge the University of Bath for a departmental funded studentship (J.D.P.), and the University of Bath Department of Chemistry for their support of M.W.S.

Funding Information:
The authors are thankful to Ilias Katsouras for fruitful discussions. Leslye Ugalde and Thijs Bel are greatly acknowledged for their technical support. The authors would also like to thank Andrew Brookes, the Chemical Characterization and Analysis Facility, University of Bath, and Dr Andrew Britton of the Henry Royce Institute, University of Leeds, for their assistance and input on characterization. This work was partially financed by the King Abdullah University of Science and Technology (KAUST) Office for Sponsored Research (OSR) under Award OSR‐CRG2018‐3783. The authors also gratefully acknowledge the University of Bath for a departmental funded studentship (J.D.P.), and the University of Bath Department of Chemistry for their support of M.W.S.

Publisher Copyright:
© 2022 Wiley-VCH GmbH

Keywords

  • p-type transistors
  • precursor
  • spatial atomic layer deposition
  • tin monoxide (SnO)
  • tin(II) alkoxide

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering

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