TY - JOUR
T1 - High-Throughput Atomic Layer Deposition of p-Type SnO Thin Film Transistors Using Tin(II)bis(tert-amyloxide)
AU - Mameli, Alfredo
AU - Parish, James
AU - Dogan, Tamer
AU - Gelinik, Gerwin
AU - Snook, Michael
AU - Straiton, Andrew
AU - Johnson, Andrew L.
AU - Kronemeijer, Auke J.
N1 - Funding Information:
The authors are thankful to Ilias Katsouras for fruitful discussions. Leslye Ugalde and Thijs Bel are greatly acknowledged for their technical support. The authors would also like to thank Andrew Brookes, the Chemical Characterization and Analysis Facility, University of Bath, and Dr Andrew Britton of the Henry Royce Institute, University of Leeds, for their assistance and input on characterization. This work was partially financed by the King Abdullah University of Science and Technology (KAUST) Office for Sponsored Research (OSR) under Award OSR-CRG2018-3783. The authors also gratefully acknowledge the University of Bath for a departmental funded studentship (J.D.P.), and the University of Bath Department of Chemistry for their support of M.W.S.
Funding Information:
The authors are thankful to Ilias Katsouras for fruitful discussions. Leslye Ugalde and Thijs Bel are greatly acknowledged for their technical support. The authors would also like to thank Andrew Brookes, the Chemical Characterization and Analysis Facility, University of Bath, and Dr Andrew Britton of the Henry Royce Institute, University of Leeds, for their assistance and input on characterization. This work was partially financed by the King Abdullah University of Science and Technology (KAUST) Office for Sponsored Research (OSR) under Award OSR‐CRG2018‐3783. The authors also gratefully acknowledge the University of Bath for a departmental funded studentship (J.D.P.), and the University of Bath Department of Chemistry for their support of M.W.S.
Publisher Copyright:
© 2022 Wiley-VCH GmbH
PY - 2022/3/22
Y1 - 2022/3/22
N2 - Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA)
2, and H
2O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of SnO, deposition rates of up to 19.5 times higher are obtained using Sn(TAA)
2 as a precursor in combination with atmospheric pressure sALD. Growths per cycle of 0.55 and 0.09 Å are measured at deposition temperatures of 100 and 210 °C, respectively. Common-gate thin film transistors (TFTs), fabricated using sALD with Sn(TAA)
2 result in linear mobilities of up to 0.4 cm
2 V
–1 s
–1 and on/off-current ratios, I
On/I
Off > 10
2. The combination of enhanced precursor chemistry and improved deposition hardware enables unprecedently high deposition rate ALD of p-type SnO, representing a significant step toward high-throughput p-type TFT fabrication on large area and flexible substrates.
AB - Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA)
2, and H
2O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of SnO, deposition rates of up to 19.5 times higher are obtained using Sn(TAA)
2 as a precursor in combination with atmospheric pressure sALD. Growths per cycle of 0.55 and 0.09 Å are measured at deposition temperatures of 100 and 210 °C, respectively. Common-gate thin film transistors (TFTs), fabricated using sALD with Sn(TAA)
2 result in linear mobilities of up to 0.4 cm
2 V
–1 s
–1 and on/off-current ratios, I
On/I
Off > 10
2. The combination of enhanced precursor chemistry and improved deposition hardware enables unprecedently high deposition rate ALD of p-type SnO, representing a significant step toward high-throughput p-type TFT fabrication on large area and flexible substrates.
KW - p-type transistors
KW - precursor
KW - spatial atomic layer deposition
KW - tin monoxide (SnO)
KW - tin(II) alkoxide
UR - http://www.scopus.com/inward/record.url?scp=85124104297&partnerID=8YFLogxK
U2 - 10.1002/admi.202101278
DO - 10.1002/admi.202101278
M3 - Article
VL - 9
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
SN - 2196-7350
IS - 9
M1 - 2101278
ER -