High temperature refractive indices of GaN

C Liu, S Stepanov, A Gott, P A Shields, E Zhirnov, Wang N Wang, E Steimetz, J T Zettler

Research output: Chapter in Book/Report/Conference proceedingChapter

10 Citations (Scopus)

Abstract

Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 degrees C were obtained in a spectral range from 370-900 nm. A peak at 412 5 rim in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 degrees C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish
Title of host publicationPhysica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6
EditorsS Hildebrandt, M Stutzmann
Pages1884-1887
Number of pages4
Volume3
Publication statusPublished - 2006

Publication series

NamePhysica Status Solidi C-Current Topics in Solid State Physics

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refractivity
reflectometers
rims
vapor phase epitaxy
sapphire
film thickness
low pressure
temperature

Cite this

Liu, C., Stepanov, S., Gott, A., Shields, P. A., Zhirnov, E., Wang, W. N., ... Zettler, J. T. (2006). High temperature refractive indices of GaN. In S. Hildebrandt, & M. Stutzmann (Eds.), Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6 (Vol. 3, pp. 1884-1887). (Physica Status Solidi C-Current Topics in Solid State Physics).

High temperature refractive indices of GaN. / Liu, C; Stepanov, S; Gott, A; Shields, P A; Zhirnov, E; Wang, Wang N; Steimetz, E; Zettler, J T.

Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6. ed. / S Hildebrandt; M Stutzmann. Vol. 3 2006. p. 1884-1887 (Physica Status Solidi C-Current Topics in Solid State Physics).

Research output: Chapter in Book/Report/Conference proceedingChapter

Liu, C, Stepanov, S, Gott, A, Shields, PA, Zhirnov, E, Wang, WN, Steimetz, E & Zettler, JT 2006, High temperature refractive indices of GaN. in S Hildebrandt & M Stutzmann (eds), Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6. vol. 3, Physica Status Solidi C-Current Topics in Solid State Physics, pp. 1884-1887.
Liu C, Stepanov S, Gott A, Shields PA, Zhirnov E, Wang WN et al. High temperature refractive indices of GaN. In Hildebrandt S, Stutzmann M, editors, Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6. Vol. 3. 2006. p. 1884-1887. (Physica Status Solidi C-Current Topics in Solid State Physics).
Liu, C ; Stepanov, S ; Gott, A ; Shields, P A ; Zhirnov, E ; Wang, Wang N ; Steimetz, E ; Zettler, J T. / High temperature refractive indices of GaN. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6. editor / S Hildebrandt ; M Stutzmann. Vol. 3 2006. pp. 1884-1887 (Physica Status Solidi C-Current Topics in Solid State Physics).
@inbook{a27d2f2ed9394d51958a3c181824dec9,
title = "High temperature refractive indices of GaN",
abstract = "Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 degrees C were obtained in a spectral range from 370-900 nm. A peak at 412 5 rim in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 degrees C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",
author = "C Liu and S Stepanov and A Gott and Shields, {P A} and E Zhirnov and Wang, {Wang N} and E Steimetz and Zettler, {J T}",
note = "ID number: ISIP:000239543600119",
year = "2006",
language = "English",
isbn = "1610-1634",
volume = "3",
series = "Physica Status Solidi C-Current Topics in Solid State Physics",
pages = "1884--1887",
editor = "S Hildebrandt and M Stutzmann",
booktitle = "Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6",

}

TY - CHAP

T1 - High temperature refractive indices of GaN

AU - Liu, C

AU - Stepanov, S

AU - Gott, A

AU - Shields, P A

AU - Zhirnov, E

AU - Wang, Wang N

AU - Steimetz, E

AU - Zettler, J T

N1 - ID number: ISIP:000239543600119

PY - 2006

Y1 - 2006

N2 - Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 degrees C were obtained in a spectral range from 370-900 nm. A peak at 412 5 rim in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 degrees C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 degrees C were obtained in a spectral range from 370-900 nm. A peak at 412 5 rim in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 degrees C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

M3 - Chapter

SN - 1610-1634

VL - 3

T3 - Physica Status Solidi C-Current Topics in Solid State Physics

SP - 1884

EP - 1887

BT - Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6

A2 - Hildebrandt, S

A2 - Stutzmann, M

ER -