@inbook{a27d2f2ed9394d51958a3c181824dec9,
title = "High temperature refractive indices of GaN",
abstract = "Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 degrees C were obtained in a spectral range from 370-900 nm. A peak at 412 5 rim in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 degrees C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",
author = "C Liu and S Stepanov and A Gott and Shields, {P A} and E Zhirnov and Wang, {Wang N} and E Steimetz and Zettler, {J T}",
note = "ID number: ISIP:000239543600119",
year = "2006",
language = "English",
isbn = "1610-1634",
volume = "3",
series = "Physica Status Solidi C-Current Topics in Solid State Physics",
pages = "1884--1887",
editor = "S Hildebrandt and M Stutzmann",
booktitle = "Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6",
}