High temperature refractive indices of GaN

C Liu; S Stepanov; A Gott; P A Shields; E Zhirnov; Wang N Wang; E Steimetz; J T Zettler

High temperature refractive indices of GaN

C Liu, S Stepanov, A Gott, P A Shields, E Zhirnov, Wang N Wang, E Steimetz, J T Zettler

Research output: Chapter or section in a book/report/conference proceeding › Chapter or section

3 Citations (SciVal)

Abstract

Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 degrees C were obtained in a spectral range from 370-900 nm. A peak at 412 5 rim in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 degrees C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Title of host publication	Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6
Editors	S Hildebrandt, M Stutzmann
Pages	1884-1887
Number of pages	4
Volume	3
Publication status	Published - 2006

Publication series

Name	Physica Status Solidi C-Current Topics in Solid State Physics

David Bullett Nanofabrication Facility
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High temperature refractive indices of GaN. / Liu, C; Stepanov, S; Gott, A et al.

Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6. ed. / S Hildebrandt; M Stutzmann. Vol. 3 2006. p. 1884-1887 (Physica Status Solidi C-Current Topics in Solid State Physics).

Research output: Chapter or section in a book/report/conference proceeding › Chapter or section

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title = "High temperature refractive indices of GaN",

abstract = "Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 degrees C were obtained in a spectral range from 370-900 nm. A peak at 412 5 rim in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 degrees C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "C Liu and S Stepanov and A Gott and Shields, {P A} and E Zhirnov and Wang, {Wang N} and E Steimetz and Zettler, {J T}",

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year = "2006",

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series = "Physica Status Solidi C-Current Topics in Solid State Physics",

pages = "1884--1887",

editor = "S Hildebrandt and M Stutzmann",

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T1 - High temperature refractive indices of GaN

AU - Liu, C

AU - Stepanov, S

AU - Gott, A

AU - Shields, P A

AU - Zhirnov, E

AU - Wang, Wang N

AU - Steimetz, E

AU - Zettler, J T

N1 - ID number: ISIP:000239543600119

PY - 2006

Y1 - 2006

N2 - Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 degrees C were obtained in a spectral range from 370-900 nm. A peak at 412 5 rim in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 degrees C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 degrees C were obtained in a spectral range from 370-900 nm. A peak at 412 5 rim in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 degrees C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

M3 - Chapter or section

SN - 1610-1634

VL - 3

T3 - Physica Status Solidi C-Current Topics in Solid State Physics

SP - 1884

EP - 1887

BT - Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6

A2 - Hildebrandt, S

A2 - Stutzmann, M

ER -

High temperature refractive indices of GaN

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