High temperature annealing of AlGaN: Stress and composition changes

A. Sarua; S. Rajasingam; M. Kuball; C. Younes; B. Yavich; Wang N Wang

doi:10.1002/pssc.200390115

High temperature annealing of AlGaN: Stress and composition changes

A. Sarua, S. Rajasingam, M. Kuball, C. Younes, B. Yavich, Wang N Wang

Department of Electronic & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (SciVal)

Abstract

Atomic force microscopy, micro-Raman scattering and Auger spectroscopy were applied to study stress and material composition in AlGa N grown by MOCHA on sapphire. Samples were annealed in N , O and air ambient between 800 °C and 1200 °C. Annealing at temperatures above 800 °C led to composition changes, cracks and defect formation resulting in stress release. Additionally, a change of built-in stress from tensile to compressive was observed after air annealing. Auger spectroscopy analysis showed this switching of stress to be related to oxygen incorporation. Oxygen accumulates in areas of macroscopic cracks as well as microscopic defects. Oxygen diffusion in AlGaN was found to be largely enhanced in the presence of water vapor in oxygen ambient. Samples were thermally stable up to 1100 °C in nitrogen and oxygen. Annealing in air led to a large surface oxidation.

Original language	English
Pages (from-to)	568-571
Number of pages	4
Journal	Physica Status Solidi (C)
Volume	0
Issue number	1
Early online date	19 Dec 2002
DOIs	https://doi.org/10.1002/pssc.200390115
Publication status	Published - Dec 2002
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: 22 Jul 2002 → 25 Jul 2002

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title = "High temperature annealing of AlGaN: Stress and composition changes",

abstract = "Atomic force microscopy, micro-Raman scattering and Auger spectroscopy were applied to study stress and material composition in AlGa N grown by MOCHA on sapphire. Samples were annealed in N , O and air ambient between 800 °C and 1200 °C. Annealing at temperatures above 800 °C led to composition changes, cracks and defect formation resulting in stress release. Additionally, a change of built-in stress from tensile to compressive was observed after air annealing. Auger spectroscopy analysis showed this switching of stress to be related to oxygen incorporation. Oxygen accumulates in areas of macroscopic cracks as well as microscopic defects. Oxygen diffusion in AlGaN was found to be largely enhanced in the presence of water vapor in oxygen ambient. Samples were thermally stable up to 1100 °C in nitrogen and oxygen. Annealing in air led to a large surface oxidation.",

author = "A. Sarua and S. Rajasingam and M. Kuball and C. Younes and B. Yavich and Wang, {Wang N}",

year = "2002",

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T1 - High temperature annealing of AlGaN

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

AU - Sarua, A.

AU - Rajasingam, S.

AU - Kuball, M.

AU - Younes, C.

AU - Yavich, B.

AU - Wang, Wang N

PY - 2002/12

Y1 - 2002/12

N2 - Atomic force microscopy, micro-Raman scattering and Auger spectroscopy were applied to study stress and material composition in AlGa N grown by MOCHA on sapphire. Samples were annealed in N , O and air ambient between 800 °C and 1200 °C. Annealing at temperatures above 800 °C led to composition changes, cracks and defect formation resulting in stress release. Additionally, a change of built-in stress from tensile to compressive was observed after air annealing. Auger spectroscopy analysis showed this switching of stress to be related to oxygen incorporation. Oxygen accumulates in areas of macroscopic cracks as well as microscopic defects. Oxygen diffusion in AlGaN was found to be largely enhanced in the presence of water vapor in oxygen ambient. Samples were thermally stable up to 1100 °C in nitrogen and oxygen. Annealing in air led to a large surface oxidation.

AB - Atomic force microscopy, micro-Raman scattering and Auger spectroscopy were applied to study stress and material composition in AlGa N grown by MOCHA on sapphire. Samples were annealed in N , O and air ambient between 800 °C and 1200 °C. Annealing at temperatures above 800 °C led to composition changes, cracks and defect formation resulting in stress release. Additionally, a change of built-in stress from tensile to compressive was observed after air annealing. Auger spectroscopy analysis showed this switching of stress to be related to oxygen incorporation. Oxygen accumulates in areas of macroscopic cracks as well as microscopic defects. Oxygen diffusion in AlGaN was found to be largely enhanced in the presence of water vapor in oxygen ambient. Samples were thermally stable up to 1100 °C in nitrogen and oxygen. Annealing in air led to a large surface oxidation.

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JO - Physica Status Solidi (C)

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IS - 1

Y2 - 22 July 2002 through 25 July 2002

ER -

High temperature annealing of AlGaN: Stress and composition changes

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