High-resolution optical detection of electron spin resonance in epitaxial semiconductor layers by coherent Raman spectroscopy

S J Bingham, J J Davies, D Wolverson

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7 Citations (Scopus)

Abstract

We describe the application to semiconductors of a microwave-frequency optical heterodyne technique that enables electron-spin-resonance spectra to be detected through coherent Raman scattering. The technique is sufficiently sensitive to detect spectra from epitaxial layers and has the added advantage of optical selectivity. We demonstrate its effectiveness with studies of a ZnSe epitaxial layer in which there is a variation in strain. The spin-resonance linewidths are sufficiently narrow for the gyromagnetic ratio to be determined with a precision of 1 part in 104 and, as the laser is tuned to resonance with differently strained parts of the material, the g value changes at a rate of approximately 0.4 eV–1. We have carried out the experiment in both transmission and reflection geometries and the technique promises to be of wide applicability.
Original languageEnglish
Article number155301
JournalPhysical Review B
Volume65
Issue number15
DOIs
Publication statusPublished - 2002

Fingerprint

Epitaxial layers
Paramagnetic resonance
Raman spectroscopy
electron paramagnetic resonance
Semiconductor materials
Coherent scattering
spin resonance
coherent scattering
high resolution
Microwave frequencies
microwave frequencies
Linewidth
Raman scattering
selectivity
Raman spectra
Geometry
Lasers
geometry
lasers
Experiments

Keywords

  • Raman spectra
  • EPR line breadth
  • semiconductor epitaxial layers
  • microwave-optical double resonance
  • gyromagnetic ratio
  • II-VI semiconductors
  • zinc compounds

Cite this

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title = "High-resolution optical detection of electron spin resonance in epitaxial semiconductor layers by coherent Raman spectroscopy",
abstract = "We describe the application to semiconductors of a microwave-frequency optical heterodyne technique that enables electron-spin-resonance spectra to be detected through coherent Raman scattering. The technique is sufficiently sensitive to detect spectra from epitaxial layers and has the added advantage of optical selectivity. We demonstrate its effectiveness with studies of a ZnSe epitaxial layer in which there is a variation in strain. The spin-resonance linewidths are sufficiently narrow for the gyromagnetic ratio to be determined with a precision of 1 part in 104 and, as the laser is tuned to resonance with differently strained parts of the material, the g value changes at a rate of approximately 0.4 eV–1. We have carried out the experiment in both transmission and reflection geometries and the technique promises to be of wide applicability.",
keywords = "Raman spectra, EPR line breadth, semiconductor epitaxial layers, microwave-optical double resonance, gyromagnetic ratio, II-VI semiconductors, zinc compounds",
author = "Bingham, {S J} and Davies, {J J} and D Wolverson",
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journal = "Physical Review B : Condensed Matter and Materials Physics",
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T1 - High-resolution optical detection of electron spin resonance in epitaxial semiconductor layers by coherent Raman spectroscopy

AU - Bingham, S J

AU - Davies, J J

AU - Wolverson, D

N1 - ID number: ISI:000175147100074

PY - 2002

Y1 - 2002

N2 - We describe the application to semiconductors of a microwave-frequency optical heterodyne technique that enables electron-spin-resonance spectra to be detected through coherent Raman scattering. The technique is sufficiently sensitive to detect spectra from epitaxial layers and has the added advantage of optical selectivity. We demonstrate its effectiveness with studies of a ZnSe epitaxial layer in which there is a variation in strain. The spin-resonance linewidths are sufficiently narrow for the gyromagnetic ratio to be determined with a precision of 1 part in 104 and, as the laser is tuned to resonance with differently strained parts of the material, the g value changes at a rate of approximately 0.4 eV–1. We have carried out the experiment in both transmission and reflection geometries and the technique promises to be of wide applicability.

AB - We describe the application to semiconductors of a microwave-frequency optical heterodyne technique that enables electron-spin-resonance spectra to be detected through coherent Raman scattering. The technique is sufficiently sensitive to detect spectra from epitaxial layers and has the added advantage of optical selectivity. We demonstrate its effectiveness with studies of a ZnSe epitaxial layer in which there is a variation in strain. The spin-resonance linewidths are sufficiently narrow for the gyromagnetic ratio to be determined with a precision of 1 part in 104 and, as the laser is tuned to resonance with differently strained parts of the material, the g value changes at a rate of approximately 0.4 eV–1. We have carried out the experiment in both transmission and reflection geometries and the technique promises to be of wide applicability.

KW - Raman spectra

KW - EPR line breadth

KW - semiconductor epitaxial layers

KW - microwave-optical double resonance

KW - gyromagnetic ratio

KW - II-VI semiconductors

KW - zinc compounds

UR - http://link.aps.org/doi/10.1103/PhysRevB.65.155301

U2 - 10.1103/PhysRevB.65.155301

DO - 10.1103/PhysRevB.65.155301

M3 - Article

VL - 65

JO - Physical Review B : Condensed Matter and Materials Physics

JF - Physical Review B : Condensed Matter and Materials Physics

SN - 1098-0121

IS - 15

M1 - 155301

ER -