High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts

Research output: Contribution to journalArticle

Abstract

A simple process has been developed to fabricate chemical vapor deposition (CVD) graphene devices that are encapsulated by hydrogen silsesquioxane (HSQ) and addressed via edge contacts. Ohmic contacts are achieved with a contact resistance of approximately 540 Ω·µm. The upper graphene surface is protected by HSQ from the very first processing step allowing device fabrication to be performed without any impairment of carrier mobility. On the contrary, mobility enhancements have been observed after HSQ encapsulation. This approach not only effectively protects devices from the ambient environment but could also be important for enabling HSQ-assisted transfer of graphene and other 2D materials.
Original languageEnglish
Article number126765
JournalMaterials Letters
Volume257
Early online date3 Oct 2019
DOIs
Publication statusPublished - 15 Dec 2019

Keywords

  • Graphene
  • HSQ
  • Edge contact
  • Mobility

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