High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts

Research output: Contribution to journalArticle

Abstract

A simple process has been developed to fabricate chemical vapor deposition (CVD) graphene devices that are encapsulated by hydrogen silsesquioxane (HSQ) and addressed via edge contacts. Ohmic contacts are achieved with a contact resistance of approximately 540 Ω·µm. The upper graphene surface is protected by HSQ from the very first processing step allowing device fabrication to be performed without any impairment of carrier mobility. On the contrary, mobility enhancements have been observed after HSQ encapsulation. This approach not only effectively protects devices from the ambient environment but could also be important for enabling HSQ-assisted transfer of graphene and other 2D materials.
Original languageEnglish
Article number126765
JournalMaterials Letters
Volume257
Early online date3 Oct 2019
DOIs
Publication statusE-pub ahead of print - 3 Oct 2019

Keywords

  • Graphene
  • HSQ
  • Edge contact
  • Mobility

Cite this

@article{e7a8912697854b9696f2e38da7f1c4dc,
title = "High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts",
abstract = "A simple process has been developed to fabricate chemical vapor deposition (CVD) graphene devices that are encapsulated by hydrogen silsesquioxane (HSQ) and addressed via edge contacts. Ohmic contacts are achieved with a contact resistance of approximately 540 Ω·µm. The upper graphene surface is protected by HSQ from the very first processing step allowing device fabrication to be performed without any impairment of carrier mobility. On the contrary, mobility enhancements have been observed after HSQ encapsulation. This approach not only effectively protects devices from the ambient environment but could also be important for enabling HSQ-assisted transfer of graphene and other 2D materials.",
keywords = "Graphene, HSQ, Edge contact, Mobility",
author = "Penglei Li and David Collomb and Simon Bending",
year = "2019",
month = "10",
day = "3",
doi = "10.1016/j.matlet.2019.126765",
language = "English",
volume = "257",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

TY - JOUR

T1 - High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts

AU - Li, Penglei

AU - Collomb, David

AU - Bending, Simon

PY - 2019/10/3

Y1 - 2019/10/3

N2 - A simple process has been developed to fabricate chemical vapor deposition (CVD) graphene devices that are encapsulated by hydrogen silsesquioxane (HSQ) and addressed via edge contacts. Ohmic contacts are achieved with a contact resistance of approximately 540 Ω·µm. The upper graphene surface is protected by HSQ from the very first processing step allowing device fabrication to be performed without any impairment of carrier mobility. On the contrary, mobility enhancements have been observed after HSQ encapsulation. This approach not only effectively protects devices from the ambient environment but could also be important for enabling HSQ-assisted transfer of graphene and other 2D materials.

AB - A simple process has been developed to fabricate chemical vapor deposition (CVD) graphene devices that are encapsulated by hydrogen silsesquioxane (HSQ) and addressed via edge contacts. Ohmic contacts are achieved with a contact resistance of approximately 540 Ω·µm. The upper graphene surface is protected by HSQ from the very first processing step allowing device fabrication to be performed without any impairment of carrier mobility. On the contrary, mobility enhancements have been observed after HSQ encapsulation. This approach not only effectively protects devices from the ambient environment but could also be important for enabling HSQ-assisted transfer of graphene and other 2D materials.

KW - Graphene

KW - HSQ

KW - Edge contact

KW - Mobility

UR - http://www.scopus.com/inward/record.url?scp=85072970537&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2019.126765

DO - 10.1016/j.matlet.2019.126765

M3 - Article

VL - 257

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

M1 - 126765

ER -