High-power ultra-fast single- and multi-mode quantum-dot lasers with superior beam profile

R. L. Sellin, D. Bimberg, V. Ustinov, N. N. Ledentsov, I. Kaiander, M. Kuntz, M. Lämmlin, K. T. Tan, C. Marinelli, M. G. Thompson, A. Wonfor, R. V. Penty, I. H. White, D. O'Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, J. K. White

Research output: Contribution to journalConference article

Abstract

Universal self-organization on surfaces of semiconductors upon deposition of a few non-lattice-matched monolayers using MOCVD or MBE leads to the formation of quantum dots (QDs). Their electronic and optical properties are closer to those of atoms than of solids. We have demonstrated for QD lasers a record low transparency current density of 6 A/cm2 per QD layer at 1.16 μm, high power of almost 12 W, an internal quantum efficiency of 98%, and an internal loss below 1.5 cm-1. Relaxation oscillations indicate the potential for cut-off frequencies larger than 10 GHz. GaAs-based QD lasers emitting at 1.3 μm exhibit an output power of 5 W and single transverse mode operation up to 300 mW. At 1.5 μm again an output power of 5 W has been obtained for a first device showing a transparency current of 70 A/cm 2 per QD layer. Single-mode lasers at 1.16 and 1.3 μm show no beam filamentation, reduced M2, reduced sensitivity to optical feedback by 30 dB and lower α-parameters as compared to quantum-well lasers. Passive mode-locking of 1.3 μm QD lasers up to 35 GHz is obtained. Error-free data modulation up to 5 Gb/s is shown, likely limited by RC parasitics only. Thus GaAs-based lasers are now close to replacing InP-based ones at least in the range up to 1.3 μm, probably up to 1.55 μm.

Original languageEnglish
Pages (from-to)46-59
Number of pages14
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5365
DOIs
Publication statusPublished - 16 Aug 2004
EventNovel In-Plane Semiconductor Lasers III - San Jose, CA, USA United States
Duration: 26 Jan 200428 Jan 2004

Keywords

  • Beam filamentation
  • GaAs
  • Lifetimes
  • Mode-locking
  • Optical feedback
  • Optoelectronic devices
  • Photonic devices
  • Quantum dot lasers
  • Telecommunication

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

High-power ultra-fast single- and multi-mode quantum-dot lasers with superior beam profile. / Sellin, R. L.; Bimberg, D.; Ustinov, V.; Ledentsov, N. N.; Kaiander, I.; Kuntz, M.; Lämmlin, M.; Tan, K. T.; Marinelli, C.; Thompson, M. G.; Wonfor, A.; Penty, R. V.; White, I. H.; O'Brien, D.; Hegarty, S. P.; Huyet, G.; McInerney, J. G.; White, J. K.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5365, 16.08.2004, p. 46-59.

Research output: Contribution to journalConference article

Sellin, RL, Bimberg, D, Ustinov, V, Ledentsov, NN, Kaiander, I, Kuntz, M, Lämmlin, M, Tan, KT, Marinelli, C, Thompson, MG, Wonfor, A, Penty, RV, White, IH, O'Brien, D, Hegarty, SP, Huyet, G, McInerney, JG & White, JK 2004, 'High-power ultra-fast single- and multi-mode quantum-dot lasers with superior beam profile', Proceedings of SPIE - The International Society for Optical Engineering, vol. 5365, pp. 46-59. https://doi.org/10.1117/12.528296
Sellin, R. L. ; Bimberg, D. ; Ustinov, V. ; Ledentsov, N. N. ; Kaiander, I. ; Kuntz, M. ; Lämmlin, M. ; Tan, K. T. ; Marinelli, C. ; Thompson, M. G. ; Wonfor, A. ; Penty, R. V. ; White, I. H. ; O'Brien, D. ; Hegarty, S. P. ; Huyet, G. ; McInerney, J. G. ; White, J. K. / High-power ultra-fast single- and multi-mode quantum-dot lasers with superior beam profile. In: Proceedings of SPIE - The International Society for Optical Engineering. 2004 ; Vol. 5365. pp. 46-59.
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abstract = "Universal self-organization on surfaces of semiconductors upon deposition of a few non-lattice-matched monolayers using MOCVD or MBE leads to the formation of quantum dots (QDs). Their electronic and optical properties are closer to those of atoms than of solids. We have demonstrated for QD lasers a record low transparency current density of 6 A/cm2 per QD layer at 1.16 μm, high power of almost 12 W, an internal quantum efficiency of 98{\%}, and an internal loss below 1.5 cm-1. Relaxation oscillations indicate the potential for cut-off frequencies larger than 10 GHz. GaAs-based QD lasers emitting at 1.3 μm exhibit an output power of 5 W and single transverse mode operation up to 300 mW. At 1.5 μm again an output power of 5 W has been obtained for a first device showing a transparency current of 70 A/cm 2 per QD layer. Single-mode lasers at 1.16 and 1.3 μm show no beam filamentation, reduced M2, reduced sensitivity to optical feedback by 30 dB and lower α-parameters as compared to quantum-well lasers. Passive mode-locking of 1.3 μm QD lasers up to 35 GHz is obtained. Error-free data modulation up to 5 Gb/s is shown, likely limited by RC parasitics only. Thus GaAs-based lasers are now close to replacing InP-based ones at least in the range up to 1.3 μm, probably up to 1.55 μm.",
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AU - Sellin, R. L.

AU - Bimberg, D.

AU - Ustinov, V.

AU - Ledentsov, N. N.

AU - Kaiander, I.

AU - Kuntz, M.

AU - Lämmlin, M.

AU - Tan, K. T.

AU - Marinelli, C.

AU - Thompson, M. G.

AU - Wonfor, A.

AU - Penty, R. V.

AU - White, I. H.

AU - O'Brien, D.

AU - Hegarty, S. P.

AU - Huyet, G.

AU - McInerney, J. G.

AU - White, J. K.

PY - 2004/8/16

Y1 - 2004/8/16

N2 - Universal self-organization on surfaces of semiconductors upon deposition of a few non-lattice-matched monolayers using MOCVD or MBE leads to the formation of quantum dots (QDs). Their electronic and optical properties are closer to those of atoms than of solids. We have demonstrated for QD lasers a record low transparency current density of 6 A/cm2 per QD layer at 1.16 μm, high power of almost 12 W, an internal quantum efficiency of 98%, and an internal loss below 1.5 cm-1. Relaxation oscillations indicate the potential for cut-off frequencies larger than 10 GHz. GaAs-based QD lasers emitting at 1.3 μm exhibit an output power of 5 W and single transverse mode operation up to 300 mW. At 1.5 μm again an output power of 5 W has been obtained for a first device showing a transparency current of 70 A/cm 2 per QD layer. Single-mode lasers at 1.16 and 1.3 μm show no beam filamentation, reduced M2, reduced sensitivity to optical feedback by 30 dB and lower α-parameters as compared to quantum-well lasers. Passive mode-locking of 1.3 μm QD lasers up to 35 GHz is obtained. Error-free data modulation up to 5 Gb/s is shown, likely limited by RC parasitics only. Thus GaAs-based lasers are now close to replacing InP-based ones at least in the range up to 1.3 μm, probably up to 1.55 μm.

AB - Universal self-organization on surfaces of semiconductors upon deposition of a few non-lattice-matched monolayers using MOCVD or MBE leads to the formation of quantum dots (QDs). Their electronic and optical properties are closer to those of atoms than of solids. We have demonstrated for QD lasers a record low transparency current density of 6 A/cm2 per QD layer at 1.16 μm, high power of almost 12 W, an internal quantum efficiency of 98%, and an internal loss below 1.5 cm-1. Relaxation oscillations indicate the potential for cut-off frequencies larger than 10 GHz. GaAs-based QD lasers emitting at 1.3 μm exhibit an output power of 5 W and single transverse mode operation up to 300 mW. At 1.5 μm again an output power of 5 W has been obtained for a first device showing a transparency current of 70 A/cm 2 per QD layer. Single-mode lasers at 1.16 and 1.3 μm show no beam filamentation, reduced M2, reduced sensitivity to optical feedback by 30 dB and lower α-parameters as compared to quantum-well lasers. Passive mode-locking of 1.3 μm QD lasers up to 35 GHz is obtained. Error-free data modulation up to 5 Gb/s is shown, likely limited by RC parasitics only. Thus GaAs-based lasers are now close to replacing InP-based ones at least in the range up to 1.3 μm, probably up to 1.55 μm.

KW - Beam filamentation

KW - GaAs

KW - Lifetimes

KW - Mode-locking

KW - Optical feedback

KW - Optoelectronic devices

KW - Photonic devices

KW - Quantum dot lasers

KW - Telecommunication

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

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