High power short pulse generation at high repetition rate from InGaN violet laser diodes

V. F. Olle, A. Wonfor, P. P. Vasil'ev, R. V. Penty, I. H. White

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The generation of 22 ps pulses with peak powers of 0.74 W by a gain-switched InGaN violet laser diode is reported. Significant pulse width dependence on repetition rate is observed. 2011

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2011
Publication statusPublished - 1 Dec 2011
EventCLEO: Science and Innovations, CLEO_SI 2011 - Baltimore, MD, USA United States
Duration: 1 May 20116 May 2011

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2011
Country/TerritoryUSA United States
CityBaltimore, MD
Period1/05/116/05/11

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Fingerprint

Dive into the research topics of 'High power short pulse generation at high repetition rate from InGaN violet laser diodes'. Together they form a unique fingerprint.

Cite this