High power short pulse generation at high repetition rate from InGaN violet laser diodes

V. F. Olle, A. Wonfor, P. P. Vasil'ev, R. V. Penty, I. H. White

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The generation of 22 ps pulses with peak powers of 0.74 W by a gain-switched InGaN violet laser diode is reported. Significant pulse width dependence on repetition rate is observed.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2011
Publication statusPublished - 1 Dec 2011
EventQuantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, USA United States
Duration: 1 May 20116 May 2011

Conference

ConferenceQuantum Electronics and Laser Science Conference, QELS 2011
CountryUSA United States
CityBaltimore, MD
Period1/05/116/05/11

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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