High-frequency modulation of semiconductor laser amplifiers

Andrew M. Lomax, Ian H. White

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Picosecond pulse amplification in modulated amplifiers is demonstrated with negligible pulse distortion for modulation frequencies between 1 and 4 GHz. Existing measurements show that up to 2.5 GHz modulation can be achieved with a gate 'on' time of 200 ps. A numerical model is reported which simulates the behavior of diode laser amplifiers under RF current modulation and is shown to be in good agreement with experimental demonstration. A simple analytical model is also reported to indicate the physical causes in observed operating trends. It is shown that in optimized bulk devices, good modulation depth could potentially be achieved with a 100 ps gate 'on' time at 5 GHz modulation frequency.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Pages242-250
Number of pages9
ISBN (Print)0819407801
Publication statusPublished - 1 Jan 1992
EventLaser Diode Technology and Applications IV - Los Angeles, CA, USA
Duration: 20 Jan 199222 Jan 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1634
ISSN (Print)0277-786X

Conference

ConferenceLaser Diode Technology and Applications IV
CityLos Angeles, CA, USA
Period20/01/9222/01/92

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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