Abstract
We have studied the electric field dependence of the electron-hole thermal generation process in hydrogenated amorphous silicon. A model was developed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling. In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism. Deep defects relaxation is also discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 185 - 190 |
| Number of pages | 6 |
| Journal | MRS Proceedings |
| Volume | 467 |
| Publication status | Published - 1997 |