High electric field effects on the thermal generation in hydrogenated amorphous silicon

Adelina Ilie, B Equer

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have studied the electric field dependence of the electron-hole thermal generation process in hydrogenated amorphous silicon. A model was developed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling. In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism. Deep defects relaxation is also discussed.
Original languageEnglish
Pages (from-to)185 - 190
Number of pages6
JournalMRS Proceedings
Volume467
Publication statusPublished - 1997

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amorphous silicon
electric fields
defects
electrons
interactions

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High electric field effects on the thermal generation in hydrogenated amorphous silicon. / Ilie, Adelina; Equer, B.

In: MRS Proceedings, Vol. 467, 1997, p. 185 - 190.

Research output: Contribution to journalArticle

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