Abstract
Heteroepitaxial ZnGa2O4 thin films grown on sapphire substrates would be preferable for fundamental studies on properties of this material for device applications. To achieve near-stoichiometric ZnGa2O4 epitaxial thin films by pulsed laser deposition (PLD), the severe loss of Zn must be overcome. Herein, the fabrication and characterization of epitaxial (111) ZnGa2O4 thin films grown on (00.1) sapphire substrates by PLD using a Zn0.97Ga0.03O target are reported. A deposition temperature of 750 °C and a laser fluence of 3.5 J cm−2 are suitable for growing near-stoichiometric ZnGa2O4 film. The in-plane orientation relationship is identified to be (Formula presented.) ZnGa2O4//[11.0] Al2O3. A 14.2 nm thick (111) ZnGa2O4 epitaxial thin film with a Zn/Ga atomic ratio of about 0.47 shows a narrow full width at half maximum value for the rocking curve of 0.1° and a direct optical bandgap of 4.9 eV.
Original language | English |
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Article number | 2000270 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 14 |
Issue number | 9 |
Early online date | 7 Sept 2020 |
DOIs | |
Publication status | Published - 30 Sept 2020 |
Bibliographical note
Funding Information:The authors gratefully acknowledge the support of the International Institute for Carbon Neutral Energy Research (WPI-I2CNER), sponsored by the World Premier International Research Center Initiative (WPI), MEXT, Japan. G.F.H. gratefully acknowledges financial support from a Kakenhi Grant-in-Aid for Young Scientists (B) Award (no. JP18K13992) and the Platform of Inter/Transdisciplinary Energy Research Support Program (Q-pit) at Kyushu University. The authors greatly thank Dr. Daniele Pergolesi at PSI for helpful discussion and comments.
Funding
The authors gratefully acknowledge the support of the International Institute for Carbon Neutral Energy Research (WPI-I2CNER), sponsored by the World Premier International Research Center Initiative (WPI), MEXT, Japan. G.F.H. gratefully acknowledges financial support from a Kakenhi Grant-in-Aid for Young Scientists (B) Award (no. JP18K13992) and the Platform of Inter/Transdisciplinary Energy Research Support Program (Q-pit) at Kyushu University. The authors greatly thank Dr. Daniele Pergolesi at PSI for helpful discussion and comments. The authors gratefully acknowledge the support of the International Institute for Carbon Neutral Energy Research (WPI‐I2CNER), sponsored by the World Premier International Research Center Initiative (WPI), MEXT, Japan. G.F.H. gratefully acknowledges financial support from a Kakenhi Grant‐in‐Aid for Young Scientists (B) Award (no. JP18K13992) and the Platform of Inter/Transdisciplinary Energy Research Support Program (Q‐pit) at Kyushu University. The authors greatly thank Dr. Daniele Pergolesi at PSI for helpful discussion and comments.
Keywords
- heteroepitaxial thin films
- pulsed laser deposition
- ZnGaO
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics