HAMILTONIAN NONSEPARABILITY AND ITS CONSEQUENCES IN SEMICONDUCTOR HETEROSTRUCTURES SUBJECTED TO HIGH LONGITUDINAL MAGNETIC-FIELDS

Alain Nogaret, LA Cury, D K Maude, Jean-Claude Portal, DL Sivco, AY Cho, Geoff Hill

Research output: Contribution to journalArticle

Abstract

In semiconductor heterostructures, the effective-mass dependence along the growth direction implies, in ideally coherent conditions, the redistribution of in-plane and longitudinal motion across each heterointerface. We study this effect in a resonant-tunneling structure with a three-dimensional emitter by applying a high quantizing magnetic field parallel to the current (B ‖ J) and scan the transmissivity over the in-plane energy of the electrons. We have calculated the bound level energy splitting in a magnetic field, the current-voltage and the current-magnetic field characteristics, which are compared to the experimental curves. We find that the coherent model fails for electrons with higher in-plane kinetic energies which are conserved throughout the whole tunneling process.
Original languageEnglish
Pages (from-to)263-267
Number of pages5
JournalPhysica B: Condensed Matter
Volume184
Issue number1 - 4
DOIs
Publication statusPublished - Feb 1993

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