Abstract
New clathrate-based phase-change materials with cage-like structures incorporating Cs and Ba guest atoms, are reported as a means of altering crystallization and amorphization behavior by controlling 'guest-cage' interactions via intra-complex guest vibrational effects. Both a high resistance to spontaneous crystallization, and long retention of the amorphous phase are achieved, as well as a low melting energy. This approach provides a route for achieving cage-controlled semiconductor devices.
Original language | English |
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Pages (from-to) | 1725-1730 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 26 |
Issue number | 11 |
Early online date | 13 Mar 2014 |
DOIs | |
Publication status | Published - 19 Mar 2014 |
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Chapman, S. (Manager)
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