GTO thyristor and bipolar transistor cascode switches

Barry Williams, John Goodfellow, Francis Robinson

Research output: Contribution to journalArticle

Abstract

The switching performance of both the bipolar transistor and gate turn-off thyristor is improved when used in a cascode switch configuration. `Snubberless' turn-off occurs without second breakdown and the technique results in shorter saturation delay times, faster current fall and higher operational sustaining voltages than obtained with conventional switching techniques. Improved switching performance is traded for increased drive circuit complexity and an increased on-state power loss associated with two series connected power semiconductor switches. The circuit techniques features and performance of two 720 V DC, 320 A cascode switches are presented. The bipolar transistor cascode switch is tested up to 100 kHz, whereas tail current power loss limits the GTO thyristor cascode switch to 16 kHz
LanguageEnglish
Pages141-153
Number of pages13
JournalIET Electric Power Applications
Volume137
Issue number3
StatusPublished - May 1990

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Bipolar transistors
Thyristors
Switches
Semiconductor switches
Networks (circuits)
Time delay
Electric potential

Cite this

GTO thyristor and bipolar transistor cascode switches. / Williams, Barry; Goodfellow, John; Robinson, Francis.

In: IET Electric Power Applications, Vol. 137, No. 3, 05.1990, p. 141-153.

Research output: Contribution to journalArticle

Williams, B, Goodfellow, J & Robinson, F 1990, 'GTO thyristor and bipolar transistor cascode switches', IET Electric Power Applications, vol. 137, no. 3, pp. 141-153.
Williams, Barry ; Goodfellow, John ; Robinson, Francis. / GTO thyristor and bipolar transistor cascode switches. In: IET Electric Power Applications. 1990 ; Vol. 137, No. 3. pp. 141-153.
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