Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

A P Knights, R M Gwilliam, B J Sealy, T J Grasby, C P Parry, D J F Fulgoni, P J Phillips, T E Whall, E H C Parker, P G Coleman

Research output: Contribution to journalArticlepeer-review

35 Citations (SciVal)
Original languageEnglish
Pages (from-to)76-79
Number of pages4
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 2001

Bibliographical note

ID number: ISI:000166118900014

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