Original language | English |
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Pages (from-to) | 76-79 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 89 |
Issue number | 1 |
Publication status | Published - 2001 |
Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures
A P Knights, R M Gwilliam, B J Sealy, T J Grasby, C P Parry, D J F Fulgoni, P J Phillips, T E Whall, E H C Parker, P G Coleman
Research output: Contribution to journal › Article › peer-review
35
Citations
(SciVal)