Abstract

Heat extraction is often essential in ensuring efficient performance of semiconductor devices and requires minimising the thermal resistance between the functional semiconductor layers and any heat sink. This paper reports the epitaxial growth of N-polar GaN films on polycrystalline diamond substrates of high thermal conductivity with metal-organic vapor phase epitaxy, by using a SixC layer formed during deposition of polycrystalline diamond on a silicon substrate. The SixC layer acts to provide the necessary structure ordering information for the formation of a single crystal GaN film at the wafer scale. It is shown that a three-dimensional island (3D) growth process removes hexagonal defects that are induced by the non-single crystal nature of the SixC layer. It is also shown that intensive 3D growth and the introduction of a convex curvature of the substrate can be deployed to reduce tensile stress in the GaN epitaxy to enable the growth of a crack-free layer up to a thickness of 1.1m. The twist and tilt can be as low as 0.65° and 0.39° respectively, values broadly comparable with GaN grown on Si substrates with a similar structure.

LanguageEnglish
Article number165103
JournalJournal of Physics D: Applied Physics
Volume50
Issue number16
DOIs
StatusPublished - 16 Mar 2017

Fingerprint

Diamond
Vapor phase epitaxy
Epitaxial films
vapor phase epitaxy
Diamonds
Metals
diamonds
Substrates
Epitaxial growth
metals
Heat sinks
Silicon
Semiconductor devices
Heat resistance
Tensile stress
heat sinks
Thermal conductivity
thermal resistance
tensile stress
semiconductor devices

Keywords

  • GaN-on-diamond
  • metal-organic vapor phase epitaxy
  • tensile stress reduction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy. / Jiang, Quanzhong; Allsopp, Duncan W.E.; Bowen, Chris R.

In: Journal of Physics D: Applied Physics, Vol. 50, No. 16, 165103, 16.03.2017.

Research output: Contribution to journalArticle

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AB - Heat extraction is often essential in ensuring efficient performance of semiconductor devices and requires minimising the thermal resistance between the functional semiconductor layers and any heat sink. This paper reports the epitaxial growth of N-polar GaN films on polycrystalline diamond substrates of high thermal conductivity with metal-organic vapor phase epitaxy, by using a SixC layer formed during deposition of polycrystalline diamond on a silicon substrate. The SixC layer acts to provide the necessary structure ordering information for the formation of a single crystal GaN film at the wafer scale. It is shown that a three-dimensional island (3D) growth process removes hexagonal defects that are induced by the non-single crystal nature of the SixC layer. It is also shown that intensive 3D growth and the introduction of a convex curvature of the substrate can be deployed to reduce tensile stress in the GaN epitaxy to enable the growth of a crack-free layer up to a thickness of 1.1m. The twist and tilt can be as low as 0.65° and 0.39° respectively, values broadly comparable with GaN grown on Si substrates with a similar structure.

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