Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE

Quanzhong Jiang, M J Edwards, Philip A Shields, Duncan W E Allsopp, Christopher R Bowen, Wang N Wang, L Tóth, B Pécz, R Srnanek, A Satka, J Kovac

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Abstract

This paper reports the direct growth by MOVPE of high-quality, crack-free III-nitrides (∼350 nm) on composite substrates comprising an ultra-thin Si (111) layer on which polycrystalline diamond (PD) has been deposited. The Si/PD substrates are designed to provide superior heat sinking performance for high power devices. The FWHM of rocking curves of the nitride films is measured to be ∼1100 arcsec from a GaN/Al 0.2Ga 0.8N/AlN/Si/PD multilayer structure. As expected from the low coefficient of thermal expansion of diamond, the epitaxial layers are under severe tensile stress. The Si (111) layer is shown to act as a compliant buffer layer between the III-nitride and the PD, i.e. the Si is under a compressive stress under the influence of GaN of larger thermal expansion coefficient, but the structure is mechanically stable. This technique is an obvious economic and technological advantage compared to direct growth of III-nitrides on single crystal diamond.
LanguageEnglish
Pages650-653
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume9
Issue number3-4
DOIs
StatusPublished - Mar 2012

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cracks
diamonds
nitrides
composite materials
thin films
thermal expansion
sinking
coefficients
tensile stress
laminates
economics
buffers
heat
single crystals
curves

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Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE. / Jiang, Quanzhong; Edwards, M J; Shields, Philip A; Allsopp, Duncan W E; Bowen, Christopher R; Wang, Wang N; Tóth, L; Pécz, B; Srnanek, R; Satka, A; Kovac, J.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, No. 3-4, 03.2012, p. 650-653.

Research output: Contribution to journalArticle

Jiang, Quanzhong ; Edwards, M J ; Shields, Philip A ; Allsopp, Duncan W E ; Bowen, Christopher R ; Wang, Wang N ; Tóth, L ; Pécz, B ; Srnanek, R ; Satka, A ; Kovac, J. / Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2012 ; Vol. 9, No. 3-4. pp. 650-653.
@article{79c9155f457b4027a47275ffabb02efe,
title = "Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE",
abstract = "This paper reports the direct growth by MOVPE of high-quality, crack-free III-nitrides (∼350 nm) on composite substrates comprising an ultra-thin Si (111) layer on which polycrystalline diamond (PD) has been deposited. The Si/PD substrates are designed to provide superior heat sinking performance for high power devices. The FWHM of rocking curves of the nitride films is measured to be ∼1100 arcsec from a GaN/Al 0.2Ga 0.8N/AlN/Si/PD multilayer structure. As expected from the low coefficient of thermal expansion of diamond, the epitaxial layers are under severe tensile stress. The Si (111) layer is shown to act as a compliant buffer layer between the III-nitride and the PD, i.e. the Si is under a compressive stress under the influence of GaN of larger thermal expansion coefficient, but the structure is mechanically stable. This technique is an obvious economic and technological advantage compared to direct growth of III-nitrides on single crystal diamond.",
author = "Quanzhong Jiang and Edwards, {M J} and Shields, {Philip A} and Allsopp, {Duncan W E} and Bowen, {Christopher R} and Wang, {Wang N} and L T{\'o}th and B P{\'e}cz and R Srnanek and A Satka and J Kovac",
year = "2012",
month = "3",
doi = "10.1002/pssc.201100368",
language = "English",
volume = "9",
pages = "650--653",
journal = "Physica Status Solidi (C)",
issn = "1610-1634",
publisher = "Wiley-VCH Verlag",
number = "3-4",

}

TY - JOUR

T1 - Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPE

AU - Jiang, Quanzhong

AU - Edwards, M J

AU - Shields, Philip A

AU - Allsopp, Duncan W E

AU - Bowen, Christopher R

AU - Wang, Wang N

AU - Tóth, L

AU - Pécz, B

AU - Srnanek, R

AU - Satka, A

AU - Kovac, J

PY - 2012/3

Y1 - 2012/3

N2 - This paper reports the direct growth by MOVPE of high-quality, crack-free III-nitrides (∼350 nm) on composite substrates comprising an ultra-thin Si (111) layer on which polycrystalline diamond (PD) has been deposited. The Si/PD substrates are designed to provide superior heat sinking performance for high power devices. The FWHM of rocking curves of the nitride films is measured to be ∼1100 arcsec from a GaN/Al 0.2Ga 0.8N/AlN/Si/PD multilayer structure. As expected from the low coefficient of thermal expansion of diamond, the epitaxial layers are under severe tensile stress. The Si (111) layer is shown to act as a compliant buffer layer between the III-nitride and the PD, i.e. the Si is under a compressive stress under the influence of GaN of larger thermal expansion coefficient, but the structure is mechanically stable. This technique is an obvious economic and technological advantage compared to direct growth of III-nitrides on single crystal diamond.

AB - This paper reports the direct growth by MOVPE of high-quality, crack-free III-nitrides (∼350 nm) on composite substrates comprising an ultra-thin Si (111) layer on which polycrystalline diamond (PD) has been deposited. The Si/PD substrates are designed to provide superior heat sinking performance for high power devices. The FWHM of rocking curves of the nitride films is measured to be ∼1100 arcsec from a GaN/Al 0.2Ga 0.8N/AlN/Si/PD multilayer structure. As expected from the low coefficient of thermal expansion of diamond, the epitaxial layers are under severe tensile stress. The Si (111) layer is shown to act as a compliant buffer layer between the III-nitride and the PD, i.e. the Si is under a compressive stress under the influence of GaN of larger thermal expansion coefficient, but the structure is mechanically stable. This technique is an obvious economic and technological advantage compared to direct growth of III-nitrides on single crystal diamond.

UR - http://www.scopus.com/inward/record.url?scp=84863390961&partnerID=8YFLogxK

UR - http://dx.doi.org/10.1002/pssc.201100368

U2 - 10.1002/pssc.201100368

DO - 10.1002/pssc.201100368

M3 - Article

VL - 9

SP - 650

EP - 653

JO - Physica Status Solidi (C)

T2 - Physica Status Solidi (C)

JF - Physica Status Solidi (C)

SN - 1610-1634

IS - 3-4

ER -