Growth kinetics and uniform scaling-up of graphene synthesis

K. Celebi, M. T. Cole, N. L. Rupesinghe, P E Greenwood, L. Tao, D. Akinwande, J. Robertson, H. G. Park, Kenneth B.K. Teo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Chemical vapor deposition on copper is the most widely used method to synthesize graphene at large scale. However, the clear understanding of the fundamental mechanisms that govern this synthesis is lacking. Using a vertical-flow, cold-wall reactor with short gas residence time we observe the early growths to study the kinetics of chemical vapor deposition of graphene on copper foils and demonstrate uniform synthesis at wafer scale. Our results indicate that the growth is limited by the catalytic dissociative dehydrogenation on the surface and copper sublimation hinders the graphene growth. We report an activation energy of 3.1 eV for ethylene-based graphene synthesis.

Original languageEnglish
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
Pages17-26
Number of pages10
Volume53
Edition1
DOIs
Publication statusPublished - 2013
Event5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting - Toronto, ON, Canada
Duration: 12 May 201317 May 2013

Conference

Conference5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period12/05/1317/05/13

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Celebi, K., Cole, M. T., Rupesinghe, N. L., Greenwood, P. E., Tao, L., Akinwande, D., Robertson, J., Park, H. G., & Teo, K. B. K. (2013). Growth kinetics and uniform scaling-up of graphene synthesis. In Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5 (1 ed., Vol. 53, pp. 17-26) https://doi.org/10.1149/05301.0017ecst