Growth kinetics and uniform scaling-up of graphene synthesis

K. Celebi; M. T. Cole; N. L. Rupesinghe; P E Greenwood; L. Tao; D. Akinwande; J. Robertson; H. G. Park; Kenneth B.K. Teo

doi:10.1149/05301.0017ecst

Growth kinetics and uniform scaling-up of graphene synthesis

K. Celebi, M. T. Cole, N. L. Rupesinghe, P E Greenwood, L. Tao, D. Akinwande, J. Robertson, H. G. Park, Kenneth B.K. Teo

Department of Electronic & Electrical Engineering

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

1 Citation (SciVal)

Abstract

Chemical vapor deposition on copper is the most widely used method to synthesize graphene at large scale. However, the clear understanding of the fundamental mechanisms that govern this synthesis is lacking. Using a vertical-flow, cold-wall reactor with short gas residence time we observe the early growths to study the kinetics of chemical vapor deposition of graphene on copper foils and demonstrate uniform synthesis at wafer scale. Our results indicate that the growth is limited by the catalytic dissociative dehydrogenation on the surface and copper sublimation hinders the graphene growth. We report an activation energy of 3.1 eV for ethylene-based graphene synthesis.

Original language	English
Title of host publication	Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
Pages	17-26
Number of pages	10
Volume	53
Edition	1
DOIs	https://doi.org/10.1149/05301.0017ecst
Publication status	Published - 2013
Event	5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting - Toronto, ON, Canada Duration: 12 May 2013 → 17 May 2013

Conference

Conference	5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
Country/Territory	Canada
City	Toronto, ON
Period	12/05/13 → 17/05/13

ASJC Scopus subject areas

General Engineering

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Celebi, K, Cole, MT, Rupesinghe, NL, Greenwood, PE, Tao, L, Akinwande, D, Robertson, J, Park, HG & Teo, KBK 2013, Growth kinetics and uniform scaling-up of graphene synthesis. in Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5. 1 edn, vol. 53, pp. 17-26, 5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting, Toronto, ON, Canada, 12/05/13. https://doi.org/10.1149/05301.0017ecst

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title = "Growth kinetics and uniform scaling-up of graphene synthesis",

abstract = "Chemical vapor deposition on copper is the most widely used method to synthesize graphene at large scale. However, the clear understanding of the fundamental mechanisms that govern this synthesis is lacking. Using a vertical-flow, cold-wall reactor with short gas residence time we observe the early growths to study the kinetics of chemical vapor deposition of graphene on copper foils and demonstrate uniform synthesis at wafer scale. Our results indicate that the growth is limited by the catalytic dissociative dehydrogenation on the surface and copper sublimation hinders the graphene growth. We report an activation energy of 3.1 eV for ethylene-based graphene synthesis. ",

author = "K. Celebi and Cole, {M. T.} and Rupesinghe, {N. L.} and Greenwood, {P E} and L. Tao and D. Akinwande and J. Robertson and Park, {H. G.} and Teo, {Kenneth B.K.}",

year = "2013",

doi = "10.1149/05301.0017ecst",

language = "English",

isbn = "9781607683742",

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booktitle = "Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5",

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note = "5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting ; Conference date: 12-05-2013 Through 17-05-2013",

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TY - GEN

T1 - Growth kinetics and uniform scaling-up of graphene synthesis

AU - Celebi, K.

AU - Cole, M. T.

AU - Rupesinghe, N. L.

AU - Greenwood, P E

AU - Tao, L.

AU - Akinwande, D.

AU - Robertson, J.

AU - Park, H. G.

AU - Teo, Kenneth B.K.

PY - 2013

Y1 - 2013

N2 - Chemical vapor deposition on copper is the most widely used method to synthesize graphene at large scale. However, the clear understanding of the fundamental mechanisms that govern this synthesis is lacking. Using a vertical-flow, cold-wall reactor with short gas residence time we observe the early growths to study the kinetics of chemical vapor deposition of graphene on copper foils and demonstrate uniform synthesis at wafer scale. Our results indicate that the growth is limited by the catalytic dissociative dehydrogenation on the surface and copper sublimation hinders the graphene growth. We report an activation energy of 3.1 eV for ethylene-based graphene synthesis.

AB - Chemical vapor deposition on copper is the most widely used method to synthesize graphene at large scale. However, the clear understanding of the fundamental mechanisms that govern this synthesis is lacking. Using a vertical-flow, cold-wall reactor with short gas residence time we observe the early growths to study the kinetics of chemical vapor deposition of graphene on copper foils and demonstrate uniform synthesis at wafer scale. Our results indicate that the growth is limited by the catalytic dissociative dehydrogenation on the surface and copper sublimation hinders the graphene growth. We report an activation energy of 3.1 eV for ethylene-based graphene synthesis.

UR - http://www.scopus.com/inward/record.url?scp=84885592947&partnerID=8YFLogxK

U2 - 10.1149/05301.0017ecst

DO - 10.1149/05301.0017ecst

M3 - Chapter in a published conference proceeding

AN - SCOPUS:84885592947

SN - 9781607683742

VL - 53

SP - 17

EP - 26

BT - Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5

T2 - 5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting

Y2 - 12 May 2013 through 17 May 2013

ER -

Growth kinetics and uniform scaling-up of graphene synthesis

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