Abstract
Memristors have emerged as promising devices for neuromorphic applications, particularly as synaptic weight. Graphene oxide, a partially oxidised and electrically insulating form of graphene, has been employed in metal/insulator/metal devices, where resistance switching based on the filamentary growth of the contacting metals has been demonstrated. Here we demonstrate an alternative highly reproducible resistance switching mechanism based on solid-state reduction of GO thin-films mediated by adsorbed water. It is shown that distinguishable and highly stable resistance states can be controllably realised in graphene oxide metal/insulator/metal devices. We have unravelled the growth mechanism and determined the growth kinetic of reduced graphene oxide, which enables a deterministic way to tune the resistance in GO devices. The demonstration of highly reproducible memristors based on graphene oxide crossbar devices is very promising for the realisation of low-cost and environmentally benign solution-processable neuromorphic synaptic weight.
| Original language | English |
|---|---|
| Pages (from-to) | 1690-1695 |
| Number of pages | 6 |
| Journal | Journal of Materials Chemistry C |
| Volume | 11 |
| Issue number | 5 |
| Early online date | 16 Jan 2023 |
| DOIs | |
| Publication status | Published - 16 Jan 2023 |
Bibliographical note
Funding Information:The authors wish to thank the help from H. Lu, R. Berger, J. Heidler for their technical help, S. H. Kazemi and M. Barazandeh for the preparation of GO powder, and Professors D. M. de Leeuw and K. Müllen for fruitful discussion. F. H. G., H. Z. and D. A. acknowledge the Ghazanfarian family through their financial support of the project and through their donation to the Amir’ Alam Ghazanfarian Electronic Materials Lab at the Institute for Advanced Studies in Basic Sciences.