Gigabit Pulse Position Bistability in Semiconductor Lasers

Dominic F.G. Gallagher, Ian H. White, John E. Carroll, R. G. Plumb

Research output: Contribution to journalArticle

Abstract

The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps.

Original languageEnglish
Pages (from-to)1391-1398
Number of pages8
JournalJournal of Lightwave Technology
Volume5
Issue number10
DOIs
Publication statusPublished - 1 Jan 1987

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Gigabit Pulse Position Bistability in Semiconductor Lasers. / Gallagher, Dominic F.G.; White, Ian H.; Carroll, John E.; Plumb, R. G.

In: Journal of Lightwave Technology, Vol. 5, No. 10, 01.01.1987, p. 1391-1398.

Research output: Contribution to journalArticle

Gallagher, Dominic F.G. ; White, Ian H. ; Carroll, John E. ; Plumb, R. G. / Gigabit Pulse Position Bistability in Semiconductor Lasers. In: Journal of Lightwave Technology. 1987 ; Vol. 5, No. 10. pp. 1391-1398.
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