Ga2Te3 and tellurium interfacial layers in ZnTe/GaSb heterostructures studied by Raman scattering

M. P. Halsall; D. Wolverson; J. J. Davies; B. Lunn; D. E. Ashenford

doi:10.1063/1.107085

Ga₂Te₃ and tellurium interfacial layers in ZnTe/GaSb heterostructures studied by Raman scattering

M. P. Halsall, D. Wolverson, J. J. Davies, B. Lunn, D. E. Ashenford

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Abstract

Raman spectroscopy of ZnTe layers grown by molecular beam epitaxy on (100) GaSb is reported. When the laser excitation is above the band gap of the ZnTe, scattering is observed only from the ZnTe LO mode and overtones. With excitation below the ZnTe band gap, a series of low frequency peaks is observed. By comparison with bulk data these peaks are identified as originating from Ga ₂Te₃ and Te present at the GaSb/ZnTe interface. We conclude that the presence of this interface material may degrade the layer quality and give rise to the anomalously large strain previously reported for such epilayers.

Original language	English
Pages (from-to)	2129-2131
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	17
DOIs	https://doi.org/10.1063/1.107085
Publication status	Published - 1 Dec 1992

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Physics and Astronomy (miscellaneous)

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title = "Ga2Te3 and tellurium interfacial layers in ZnTe/GaSb heterostructures studied by Raman scattering",

abstract = "Raman spectroscopy of ZnTe layers grown by molecular beam epitaxy on (100) GaSb is reported. When the laser excitation is above the band gap of the ZnTe, scattering is observed only from the ZnTe LO mode and overtones. With excitation below the ZnTe band gap, a series of low frequency peaks is observed. By comparison with bulk data these peaks are identified as originating from Ga 2Te3 and Te present at the GaSb/ZnTe interface. We conclude that the presence of this interface material may degrade the layer quality and give rise to the anomalously large strain previously reported for such epilayers.",

author = "Halsall, {M. P.} and D. Wolverson and Davies, {J. J.} and B. Lunn and Ashenford, {D. E.}",

year = "1992",

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T1 - Ga2Te3 and tellurium interfacial layers in ZnTe/GaSb heterostructures studied by Raman scattering

AU - Halsall, M. P.

AU - Wolverson, D.

AU - Davies, J. J.

AU - Lunn, B.

AU - Ashenford, D. E.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Raman spectroscopy of ZnTe layers grown by molecular beam epitaxy on (100) GaSb is reported. When the laser excitation is above the band gap of the ZnTe, scattering is observed only from the ZnTe LO mode and overtones. With excitation below the ZnTe band gap, a series of low frequency peaks is observed. By comparison with bulk data these peaks are identified as originating from Ga 2Te3 and Te present at the GaSb/ZnTe interface. We conclude that the presence of this interface material may degrade the layer quality and give rise to the anomalously large strain previously reported for such epilayers.

AB - Raman spectroscopy of ZnTe layers grown by molecular beam epitaxy on (100) GaSb is reported. When the laser excitation is above the band gap of the ZnTe, scattering is observed only from the ZnTe LO mode and overtones. With excitation below the ZnTe band gap, a series of low frequency peaks is observed. By comparison with bulk data these peaks are identified as originating from Ga 2Te3 and Te present at the GaSb/ZnTe interface. We conclude that the presence of this interface material may degrade the layer quality and give rise to the anomalously large strain previously reported for such epilayers.

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JO - Applied Physics Letters

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ER -

Ga₂Te₃ and tellurium interfacial layers in ZnTe/GaSb heterostructures studied by Raman scattering

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