GaN nano-pendeo-epitaxy on Si(111) substrates

Chaowang Liu, Wang Nang Wang, Somyod Denchitcharoen, Alan Gott, Philip A. Shields, Duncan W.E. Allsopp

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6 Citations (SciVal)


Nano-pendeo-epitaxial GaN films have been grown by metalorganic vapour phase epitaxy on nanocolumns fabricated on thin GaN-on-Si(111) templates. Optical and structural performances of the films are improved, crack densities are reduced, and self-separation of GaN films from the substrates at the nanocolumns has been realized. The success of the nano-pendeo-epitaxy of GaN films is attributed to the following three techniques developed in this study: (1) the growth of high quality ultrathin GaN/AlN templates on on Si(111) substrates, (2) the fabrication of uniform nanocolumns across the 2-inch wafer surface, and (3) the in situ conversion of the exposed silicon surfaces of the fabricated nanocolumns to silicon nitride.

Original languageEnglish
Pages (from-to)S527-S530
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue numberSUPPL. 2
Early online date26 May 2009
Publication statusPublished - 30 Jun 2009

ASJC Scopus subject areas

  • Condensed Matter Physics


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