GaN epitaxial layer over growth method

Wang-Nang Wang (Inventor)

Research output: Patent

Abstract

Nanostructures formed on a surface of a substrate are used as nucleation sites for epitaxial overgrowth of bulk gallium nitride semiconductor crystals including device layers. Nanocolumn nucleation sites are formed using a nanostructured mask on the substrate by etching the substrate or by selective area growth in the mask openings. The epitaxial growth method is used for fabricating gallium nitride optoelectronic devices.
Original languageEnglish
Patent numberGB2446471 (A)
IPCH01L21/20
Publication statusPublished - 13 Aug 2008

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  • Cite this

    Wang, W-N. (2008). IPC No. H01L21/20. GaN epitaxial layer over growth method. (Patent No. GB2446471 (A)).