GaN epitaxial layer over growth method

Wang-Nang Wang

GaN epitaxial layer over growth method

Department of Electronic & Electrical Engineering

Research output: Patent

Abstract

Nanostructures formed on a surface of a substrate are used as nucleation sites for epitaxial overgrowth of bulk gallium nitride semiconductor crystals including device layers. Nanocolumn nucleation sites are formed using a nanostructured mask on the substrate by etching the substrate or by selective area growth in the mask openings. The epitaxial growth method is used for fabricating gallium nitride optoelectronic devices.

Original language	English
Patent number	GB2446471 (A)
IPC	H01L21/20,C30B25/18
Priority date	9/02/07
Publication status	Published - 13 Aug 2008

Cite this

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title = "GaN epitaxial layer over growth method",

abstract = "Nanostructures formed on a surface of a substrate are used as nucleation sites for epitaxial overgrowth of bulk gallium nitride semiconductor crystals including device layers. Nanocolumn nucleation sites are formed using a nanostructured mask on the substrate by etching the substrate or by selective area growth in the mask openings. The epitaxial growth method is used for fabricating gallium nitride optoelectronic devices.",

author = "Wang-Nang Wang",

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AB - Nanostructures formed on a surface of a substrate are used as nucleation sites for epitaxial overgrowth of bulk gallium nitride semiconductor crystals including device layers. Nanocolumn nucleation sites are formed using a nanostructured mask on the substrate by etching the substrate or by selective area growth in the mask openings. The epitaxial growth method is used for fabricating gallium nitride optoelectronic devices.

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M3 - Patent

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GaN epitaxial layer over growth method

Abstract

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