GaN distributed bragg reflector cavity for sensing applications

S. Jia; E. D. Le Boulbar; K. Balram; J. R. Pugh; T. Wang; D. W.E. Allsopp; P. A. Shields; M. J. Cryan

doi:10.1364/FIO.2018.JTu3A.86

GaN distributed bragg reflector cavity for sensing applications

S. Jia, E. D. Le Boulbar, K. Balram, J. R. Pugh, T. Wang, D. W.E. Allsopp, P. A. Shields, M. J. Cryan

Department of Electronic & Electrical Engineering

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Abstract

GaN grating couplers and a distributed Bragg reflector cavity are fabricated using displacement Talbot lithography on GaN-on-sapphire. Cavity resonances are simulated and measured for two devices with Q factors of ∼200.

Original language	English
Title of host publication	Frontiers in Optics, FIO 2018
Publisher	OSA Publishing
Volume	Part F114-FIO 2018
ISBN (Electronic)	9781557528209
DOIs	https://doi.org/10.1364/FIO.2018.JTu3A.86
Publication status	Published - 1 Jan 2018
Event	Frontiers in Optics, FIO 2018 - Washington, DC, USA United States Duration: 16 Sept 2018 → 20 Sept 2018

Conference

Conference	Frontiers in Optics, FIO 2018
Country/Territory	USA United States
City	Washington, DC
Period	16/09/18 → 20/09/18

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Access to Document

10.1364/FIO.2018.JTu3A.86

Cite this

@inproceedings{91cf51db2b8b4ffabc506188d35a3fc9,

title = "GaN distributed bragg reflector cavity for sensing applications",

abstract = "GaN grating couplers and a distributed Bragg reflector cavity are fabricated using displacement Talbot lithography on GaN-on-sapphire. Cavity resonances are simulated and measured for two devices with Q factors of ∼200.",

author = "S. Jia and \{Le Boulbar\}, \{E. D.\} and K. Balram and Pugh, \{J. R.\} and T. Wang and Allsopp, \{D. W.E.\} and Shields, \{P. A.\} and Cryan, \{M. J.\}",

year = "2018",

month = jan,

day = "1",

doi = "10.1364/FIO.2018.JTu3A.86",

language = "English",

volume = "Part F114-FIO 2018",

booktitle = "Frontiers in Optics, FIO 2018",

publisher = "OSA Publishing",

address = "USA United States",

note = "Frontiers in Optics, FIO 2018 ; Conference date: 16-09-2018 Through 20-09-2018",

}

TY - GEN

T1 - GaN distributed bragg reflector cavity for sensing applications

AU - Jia, S.

AU - Le Boulbar, E. D.

AU - Balram, K.

AU - Pugh, J. R.

AU - Wang, T.

AU - Allsopp, D. W.E.

AU - Shields, P. A.

AU - Cryan, M. J.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - GaN grating couplers and a distributed Bragg reflector cavity are fabricated using displacement Talbot lithography on GaN-on-sapphire. Cavity resonances are simulated and measured for two devices with Q factors of ∼200.

AB - GaN grating couplers and a distributed Bragg reflector cavity are fabricated using displacement Talbot lithography on GaN-on-sapphire. Cavity resonances are simulated and measured for two devices with Q factors of ∼200.

UR - https://www.scopus.com/pages/publications/85059400201

U2 - 10.1364/FIO.2018.JTu3A.86

DO - 10.1364/FIO.2018.JTu3A.86

M3 - Chapter in a published conference proceeding

AN - SCOPUS:85059400201

VL - Part F114-FIO 2018

BT - Frontiers in Optics, FIO 2018

PB - OSA Publishing

T2 - Frontiers in Optics, FIO 2018

Y2 - 16 September 2018 through 20 September 2018

ER -

GaN distributed bragg reflector cavity for sensing applications

Abstract

Conference

ASJC Scopus subject areas

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Manufacturing of Nano-Engineered III-N Semiconductors

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

Cite this

GaN distributed bragg reflector cavity for sensing applications

Abstract

Conference

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Projects

Manufacturing of Nano-Engineered III-N Semiconductors

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

Cite this