GaN distributed bragg reflector cavity for sensing applications

S. Jia; E. D. Le Boulbar; K. Balram; J. R. Pugh; T. Wang; D. W.E. Allsopp; P. A. Shields; M. J. Cryan

doi:10.1364/FIO.2018.JTu3A.86

GaN distributed bragg reflector cavity for sensing applications

S. Jia
, E. D. Le Boulbar
, K. Balram
, J. R. Pugh
, T. Wang
, D. W.E. Allsopp
, P. A. Shields
, M. J. Cryan

Department of Electronic & Electrical Engineering

University of Bristol
University of Sheffield

Research output: Chapter or section in a book/report/conference proceeding › Chapter in a published conference proceeding

Abstract

GaN grating couplers and a distributed Bragg reflector cavity are fabricated using displacement Talbot lithography on GaN-on-sapphire. Cavity resonances are simulated and measured for two devices with Q factors of ∼200.

Original language	English
Title of host publication	Frontiers in Optics, FIO 2018
Publisher	OSA Publishing
Volume	Part F114-FIO 2018
ISBN (Electronic)	9781557528209
DOIs	https://doi.org/10.1364/FIO.2018.JTu3A.86
Publication status	Published - 1 Jan 2018
Event	Frontiers in Optics, FIO 2018 - Washington, DC, USA United States Duration: 16 Sept 2018 → 20 Sept 2018

Conference

Conference	Frontiers in Optics, FIO 2018
Country/Territory	USA United States
City	Washington, DC
Period	16/09/18 → 20/09/18

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Access to Document

10.1364/FIO.2018.JTu3A.86

Cite this

@inproceedings{91cf51db2b8b4ffabc506188d35a3fc9,

title = "GaN distributed bragg reflector cavity for sensing applications",

abstract = "GaN grating couplers and a distributed Bragg reflector cavity are fabricated using displacement Talbot lithography on GaN-on-sapphire. Cavity resonances are simulated and measured for two devices with Q factors of ∼200.",

author = "S. Jia and \{Le Boulbar\}, \{E. D.\} and K. Balram and Pugh, \{J. R.\} and T. Wang and Allsopp, \{D. W.E.\} and Shields, \{P. A.\} and Cryan, \{M. J.\}",

year = "2018",

month = jan,

day = "1",

doi = "10.1364/FIO.2018.JTu3A.86",

language = "English",

volume = "Part F114-FIO 2018",

booktitle = "Frontiers in Optics, FIO 2018",

publisher = "OSA Publishing",

address = "USA United States",

note = "Frontiers in Optics, FIO 2018 ; Conference date: 16-09-2018 Through 20-09-2018",

}

TY - GEN

T1 - GaN distributed bragg reflector cavity for sensing applications

AU - Jia, S.

AU - Le Boulbar, E. D.

AU - Balram, K.

AU - Pugh, J. R.

AU - Wang, T.

AU - Allsopp, D. W.E.

AU - Shields, P. A.

AU - Cryan, M. J.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - GaN grating couplers and a distributed Bragg reflector cavity are fabricated using displacement Talbot lithography on GaN-on-sapphire. Cavity resonances are simulated and measured for two devices with Q factors of ∼200.

AB - GaN grating couplers and a distributed Bragg reflector cavity are fabricated using displacement Talbot lithography on GaN-on-sapphire. Cavity resonances are simulated and measured for two devices with Q factors of ∼200.

UR - https://www.scopus.com/pages/publications/85059400201

U2 - 10.1364/FIO.2018.JTu3A.86

DO - 10.1364/FIO.2018.JTu3A.86

M3 - Chapter in a published conference proceeding

AN - SCOPUS:85059400201

VL - Part F114-FIO 2018

BT - Frontiers in Optics, FIO 2018

PB - OSA Publishing

T2 - Frontiers in Optics, FIO 2018

Y2 - 16 September 2018 through 20 September 2018

ER -

GaN distributed bragg reflector cavity for sensing applications

Abstract

Conference

ASJC Scopus subject areas

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Manufacturing of Nano-Engineered III-N Semiconductors

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

Cite this

GaN distributed bragg reflector cavity for sensing applications

Abstract

Conference

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Projects

Manufacturing of Nano-Engineered III-N Semiconductors

Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

Cite this