GaN devices based on nanorods

D Cherns, L Meshi, I Griffiths, S Khongphetsak, S V Novikov, R P Campion, C T Foxon, Chaowang Liu, Philip Shields, Wang Wang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Transmission and scanning electron microscopy are used to examine the role of an intermediate nanorod layer in reducing threading defect densities in GaN/(0001)sapphire. Films grown by molecular beam epitaxy under N-rich conditions showed Ga-polar nanorods growing out of a more compact N-polar layer. The nanorods sometimes contained extended threading defects, which were faulted dipoles lying on {10-10} planes with a displacement vector of 1/2[0001], which act as sources for spiral growth. By overgrowing the nanorods under Ga-rich conditions, continuous epilayers were formed with threading defect densities down to 108 cm-2. In a second approach, nanorods produced by etching through a self-organised layer of Ni islands were overgrown by metal-organic chemical vapour deposition, to produce overlayers with defect densities down to 5*107 cm-2. In both cases, the mechanisms by which the nanorod layer reduces the threading defect density are identified.
Original languageEnglish
Article number012001
Number of pages10
JournalJournal of Physics: Conference Series
Volume209
Issue number1
DOIs
Publication statusPublished - 26 Feb 2010
Event16th International Conference on Microscopy of Semiconducting Materials
- University of Oxford, Oxford, UK United Kingdom
Duration: 17 Mar 200920 Mar 2009

Fingerprint

nanorods
defects
metalorganic chemical vapor deposition
sapphire
molecular beam epitaxy
etching
dipoles
transmission electron microscopy
scanning electron microscopy

Keywords

  • threading defects
  • displacement vectors
  • Ga-rich conditions
  • self-organised
  • rich conditions
  • polar layers
  • overlayers
  • nanorod layers
  • metal-organic
  • spiral growth
  • chemical vapour deposition

Cite this

Cherns, D., Meshi, L., Griffiths, I., Khongphetsak, S., Novikov, S. V., Campion, R. P., ... Wang, W. (2010). GaN devices based on nanorods. Journal of Physics: Conference Series, 209(1), [012001]. https://doi.org/10.1088/1742-6596/209/1/012001

GaN devices based on nanorods. / Cherns, D; Meshi, L; Griffiths, I; Khongphetsak, S; Novikov, S V; Campion, R P; Foxon, C T; Liu, Chaowang; Shields, Philip; Wang, Wang.

In: Journal of Physics: Conference Series, Vol. 209, No. 1, 012001, 26.02.2010.

Research output: Contribution to journalArticle

Cherns, D, Meshi, L, Griffiths, I, Khongphetsak, S, Novikov, SV, Campion, RP, Foxon, CT, Liu, C, Shields, P & Wang, W 2010, 'GaN devices based on nanorods', Journal of Physics: Conference Series, vol. 209, no. 1, 012001. https://doi.org/10.1088/1742-6596/209/1/012001
Cherns D, Meshi L, Griffiths I, Khongphetsak S, Novikov SV, Campion RP et al. GaN devices based on nanorods. Journal of Physics: Conference Series. 2010 Feb 26;209(1). 012001. https://doi.org/10.1088/1742-6596/209/1/012001
Cherns, D ; Meshi, L ; Griffiths, I ; Khongphetsak, S ; Novikov, S V ; Campion, R P ; Foxon, C T ; Liu, Chaowang ; Shields, Philip ; Wang, Wang. / GaN devices based on nanorods. In: Journal of Physics: Conference Series. 2010 ; Vol. 209, No. 1.
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