GaAs/GaAIAs MULTIQUANTUM WELL WAVEGUIDES FOR ALL-OPTICAL SWITCHING AT 1·55μm

H. K. Tsang, R. S. Grant, R. V. Penty, I. H. White, J. B.D. Soole, E. Colas, H. P. Leblanc, N. C. Andreadakis, M. S. Kim, W. Sibbett

Research output: Contribution to journalArticlepeer-review

Abstract

The first measurements of selfphase modulation and nonlinear absorption in a GaAs/GaAlAs multiquantum well (MQW) waveguide near the halfbandgap resonance are reported. An intensitydependent refractive index coefficient n2 of 9 × 10/W and a twophoton absorption coefficient of 0·15cm/GW at l·55 μm wavelength for TM light were obtained. This corresponds to an intensityindependent figure of merit of 24 rad phase change in one nonlinear absorption length, high enough to allow the implementation of subpicosecond alloptical switches at 1·55μm wavelength.

Original languageEnglish
Pages (from-to)1993-1995
Number of pages3
JournalElectronics Letters
Volume27
Issue number22
DOIs
Publication statusPublished - 24 Oct 1991

Keywords

  • Optical switching
  • Semiconductor devices and materials
  • Waveguides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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