Front and back channel properties of asymmetrical double-gate polysilicon TFTs

F. V. Farmakis; D. N. Kouvatsos; A. T. Voutsas; D. C. Moschou; G. P. Kontogiannopoulos; G. J. Papaioannou

doi:10.1149/1.2356337

Front and back channel properties of asymmetrical double-gate polysilicon TFTs

F. V. Farmakis, D. N. Kouvatsos, A. T. Voutsas, D. C. Moschou, G. P. Kontogiannopoulos, G. J. Papaioannou

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Abstract

Polycrystalline silicon TFTs with different front- and back-gate lengths are investigated. In addition, the laser annealing process yields high quality directional grains that enable us to orient TFT channels parallel or perpendicular to the grain boundaries. It is demonstrated that double-gate TFTs are fully depleted and therefore back interface properties exert critical influence to the overall TFT electrical performance. More specifically, it is demonstrated that the back interface contains a large number of defects, resulting in a deterioration of carrier conductance. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	75-80
Number of pages	6
Journal	Journal of the Electrochemical Society
Volume	3
Issue number	8
DOIs	https://doi.org/10.1149/1.2356337
Publication status	Published - 2006

ASJC Scopus subject areas

General Engineering

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title = "Front and back channel properties of asymmetrical double-gate polysilicon TFTs",

abstract = "Polycrystalline silicon TFTs with different front- and back-gate lengths are investigated. In addition, the laser annealing process yields high quality directional grains that enable us to orient TFT channels parallel or perpendicular to the grain boundaries. It is demonstrated that double-gate TFTs are fully depleted and therefore back interface properties exert critical influence to the overall TFT electrical performance. More specifically, it is demonstrated that the back interface contains a large number of defects, resulting in a deterioration of carrier conductance. copyright The Electrochemical Society.",

author = "Farmakis, {F. V.} and Kouvatsos, {D. N.} and Voutsas, {A. T.} and Moschou, {D. C.} and Kontogiannopoulos, {G. P.} and Papaioannou, {G. J.}",

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AU - Farmakis, F. V.

AU - Kouvatsos, D. N.

AU - Voutsas, A. T.

AU - Moschou, D. C.

AU - Kontogiannopoulos, G. P.

AU - Papaioannou, G. J.

PY - 2006

Y1 - 2006

N2 - Polycrystalline silicon TFTs with different front- and back-gate lengths are investigated. In addition, the laser annealing process yields high quality directional grains that enable us to orient TFT channels parallel or perpendicular to the grain boundaries. It is demonstrated that double-gate TFTs are fully depleted and therefore back interface properties exert critical influence to the overall TFT electrical performance. More specifically, it is demonstrated that the back interface contains a large number of defects, resulting in a deterioration of carrier conductance. copyright The Electrochemical Society.

AB - Polycrystalline silicon TFTs with different front- and back-gate lengths are investigated. In addition, the laser annealing process yields high quality directional grains that enable us to orient TFT channels parallel or perpendicular to the grain boundaries. It is demonstrated that double-gate TFTs are fully depleted and therefore back interface properties exert critical influence to the overall TFT electrical performance. More specifically, it is demonstrated that the back interface contains a large number of defects, resulting in a deterioration of carrier conductance. copyright The Electrochemical Society.

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Front and back channel properties of asymmetrical double-gate polysilicon TFTs

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