Front and back channel properties of asymmetrical double-gate polysilicon TFTs

F. V. Farmakis, D. N. Kouvatsos, A. T. Voutsas, D. C. Moschou, G. P. Kontogiannopoulos, G. J. Papaioannou

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Abstract

Polycrystalline silicon TFTs with different front- and back-gate lengths are investigated. In addition, the laser annealing process yields high quality directional grains that enable us to orient TFT channels parallel or perpendicular to the grain boundaries. It is demonstrated that double-gate TFTs are fully depleted and therefore back interface properties exert critical influence to the overall TFT electrical performance. More specifically, it is demonstrated that the back interface contains a large number of defects, resulting in a deterioration of carrier conductance. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)75-80
Number of pages6
JournalJournal of the Electrochemical Society
Volume3
Issue number8
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Engineering(all)

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    Farmakis, F. V., Kouvatsos, D. N., Voutsas, A. T., Moschou, D. C., Kontogiannopoulos, G. P., & Papaioannou, G. J. (2006). Front and back channel properties of asymmetrical double-gate polysilicon TFTs. Journal of the Electrochemical Society, 3(8), 75-80. https://doi.org/10.1149/1.2356337