Frequency-resolved photoluminescence spectroscopy of a-Si:H, a-P2Se, a-P3Se, and c-P4Se3

M. Bort, D. Wolverson

Research output: Contribution to journalArticlepeer-review


Conventionally, frequency-resolved spectroscopy (FRS) measures the photo-luminescence (PL) intensity in exact quadrature to the modulated excitation and gives directly the lifetime distribution G(τ) of the PL over the time-scale 10-1 to 10-6s. The first measurement of G(τ) for the midgap PL in a-P2Se and c-P4Se3 has been obtained by this method. G(τ) is found to be extremely narrow for both glass and crystal; this is taken to be evidence for a common excitonic recombination mechanism. The phase shift of the PL with respect to the excitation is usually not presented. We show that the phase is very sensitive to processes faster than 10-5 s, and can contain significant structure not observed in the quadrature signal. For a-P2Se, a model with two lifetimes in the nanosecond and millisecond regime reproduces the experimentally observed structure. Amorphous silicon displays similar structure arising from a broad distribution of lifetimes, with a varying component outside the experimental time scale.

Original languageEnglish
Pages (from-to)47-58
Number of pages12
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Issue number1
Publication statusPublished - Jul 1990

ASJC Scopus subject areas

  • General Chemical Engineering
  • General Physics and Astronomy


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