Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates

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• Finished

  Manufacturing of Nano-Engineered III-N Semiconductors

  Shields, P. (PI), Allsopp, D. (CoI) & Wang, W. (CoI)

  Engineering and Physical Sciences Research Council

  1/05/15 → 30/09/21

  Project: Research council

  • Lithography 100%
  • Nanorod 95%
  • Aluminum Nitride 69%
  • Cathodoluminescence 51%
  • Light-Emitting Diode 50%

• Manufacturing of Nano-Engineered III-N Semiconductors - Equipment

  Shields, P. (PI) & Allsopp, D. (CoI)

  Engineering and Physical Sciences Research Council

  1/02/15 → 31/01/20

  Project: Research council

  • Lithography 100%
  • Nanorod 74%
  • Aluminum Nitride 52%
  • Nanowire 51%
  • Vapor Phase Epitaxy 38%